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08771 ENA1511A 04180 66P308 13622 DS4250P AN3254 DS4250P
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  hci Datasheet PDF File

For hci Found Datasheets File :: 558    Search Time::5.61ms    
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    HTF3223 HF3223

HUMIREL[Humirel]
Part No. HTF3223 HF3223
OCR Text ...p, Toluene, acids (H2SO4, HNO3, hci), HMDS, Insecticide, Cigarette smoke, a non exhaustive list. HF3223 / HTF3223 is not light sensitive. G PACKAGE OUTLINE HF3223 / HTF3223 Dim A B C D E F G Min 9.7 8.5 Max ...
Description TEMPERATURE AND HUMIDITY MODULE 温湿度模

File Size 139.80K  /  4 Page

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    PTF180101 PTF180101S

INFINEON[Infineon Technologies AG]
Part No. PTF180101 PTF180101S
OCR Text ...Excellent thermal stability Low hci drift Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power PTF180101S Package 32259 EDGE EVM Performance EVM and Efficiency vs. Output Power VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz 4 40 Effi...
Description LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz

File Size 306.52K  /  10 Page

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    PTF180601 PTF180601C PTF180601E

INFINEON[Infineon Technologies AG]
Part No. PTF180601 PTF180601C PTF180601E
OCR Text ...Excellent thermal stability Low hci Drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power * EVM RMS (Average %).. * 3 Efficiency 30 Efficiency (%) * * * 2 20 1 EVM 0 35 37 39 41 43 45 10 0 PTF1...
Description LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦,DCS / PCS的兆赫波8050年,1930-1990兆赫
LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz

File Size 229.29K  /  11 Page

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    PTF180901E PTF180901F

INFINEON[Infineon Technologies AG]
Part No. PTF180901E PTF180901F
OCR Text ...Excellent thermal stability Low hci drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power Typical EDGE performance - Average output power = 35 W - Gain = 14.5 dB - Efficiency = 32% - EVM = 1.7% AVG - ACPR @ 400 KHz = -60 dBc...
Description GSM/EDGE RF Power FET

File Size 164.90K  /  2 Page

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    PTF181301 PTF181301A

INFINEON[Infineon Technologies AG]
Part No. PTF181301 PTF181301A
OCR Text ...Excellent thermal stability Low hci drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power EDGE EVM Performance EVM & Efficiency vs. Output Power VDD = 28 V, IDQ = 1.8 A, f = 1879.8 MHz 4 40 Efficiency 3 30 * EVM RMS ...
Description LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz

File Size 63.03K  /  4 Page

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    PTF210301 PTF210301A PTF210301E

INFINEON[Infineon Technologies AG]
Part No. PTF210301 PTF210301A PTF210301E
OCR Text ...Excellent thermal stability Low hci drift Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power Two-Carrier WCDMA Drive-Up f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB, 10 MHz Carrier Spacing, VDD = 28 V, IDQ = 380 mA -25 Effic...
Description LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz

File Size 333.91K  /  8 Page

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    PTF210451 PTF210451E

INFINEON[Infineon Technologies AG]
Part No. PTF210451 PTF210451E
OCR Text ...Excellent thermal stability Low hci Drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power Two-Carrier WCDMA Drive-Up VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 Effic...
Description LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz

File Size 402.88K  /  8 Page

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For hci Found Datasheets File :: 558    Search Time::5.61ms    
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