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For hex-driver Found Datasheets File :: 2127    Search Time::3.469ms    
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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surfac...Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surfac...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surfac...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...f accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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For hex-driver Found Datasheets File :: 2127    Search Time::3.469ms    
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