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8A102 EPF8183S NLP250 GRM21 1517P FMMTA92 P5N60 075784
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    Diodes Inc.
Part No. SBM540-13-F
OCR Text ...b c d e g j h k l m a p 1 2 3 p i n 1 p i n 2 p i n 3 , b o t t o m s i d e h e a t s i n k c characteristic symbol value unit pea...f = 5a, t s = 25 c i f = 5a, t s = 125 c i f = 10a, t s = 25 c i f = 10a, t s = 125 c ...
Description 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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    Diodes Inc.
Diodes, Inc.
Part No. SBM340-13-F
OCR Text ...b c d e g j h k l m a p 1 2 3 p i n 1 p i n 2 p i n 3 , b o t t o m s i d e h e a t s i n k c characteristic symbol value unit pea...f = 3a, t j = 25 c i f = 3a, t j = 125 c i f = 6a, t j = 25 c i f = 6a, t j = 125...
Description 3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 3 A, 40 V, SILICON, RECTIFIER DIODE

File Size 383.72K  /  3 Page

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    MMDTA42-7-F

Diodes Incorporated
Part No. MMDTA42-7-F
OCR Text ...tor current (note 1) (note 2) i c 500 ma power dissipation (note 1) p d 300 mw thermal resistance, j unction to ambient (note 1) r q ja 41...f b c h k mechanical data case: sot-26 case material: molded plastic, "green" molding compound, ...
Description DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

File Size 421.39K  /  4 Page

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    MMBTA92-7-F MMBTA921

Diodes Incorporated
Part No. MMBTA92-7-F MMBTA921
OCR Text ...ctor current (note 1) (note 3) i c -500 ma power dissipation (note 1) p d 300 mw thermal resistance, j unction to ambient (note 1) r q ja 4...f = 1.0mhz, i e = 0 current gain-bandwidth product f t 50 ? mhz v ce = -20v, i c = -10ma, f = 10...
Description PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

File Size 328.67K  /  3 Page

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    Diodes Inc.
Diodes, Inc.
Part No. 1N6263W-7-F
OCR Text ... v forward continuous current i f 15 ma non-repetitive peak forward surge current @ t 1.0s @ t = 10ms i fsm 50 2.0 ma a power dissipation (note 1) ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.015 A, 60 V, SILICON, SIGNAL DIODE

File Size 203.35K  /  3 Page

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    Cypress Semiconductor Corp.
Part No. DIM200PHM33-F
OCR Text ...es 3300v v ce(sat) * (typ) 3.0v i c (max) 200a i c(pk) (max) 400a * measured at auxiliary terminals. dim200phm33-f000 half bridge igbt modul...f = 200a i f = 200a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz v ce = 25v, v ge = 0v, f ...
Description IGBT Modules - Half Bridge IGBT模块-半桥

File Size 200.78K  /  9 Page

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    Diodes Inc.
Diodes, Inc.
Part No. DL4003-13-F DL4004-13-F DL4001-13-F DL4002-13-F DL4005-13-F DL4007-13-F DL4006-13-F
OCR Text ...ctified current @ t t = 75 c i o 1.0 a peak forward surge cur rent 8.3ms single half sine-wave superimposed on rated load i fsm 30 a maximum forward voltage @ i f = 1.0a v f m 1.1 v maximum dc reverse current @ t a = 25 c @rated d...
Description 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE

File Size 322.86K  /  3 Page

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    Diodes Inc.
Diodes, Inc.
Part No. DDTA122LU-7-F DDTA122TU-7-F DDTA142TU-7-F DDTA142JU-7-F
OCR Text ... all i c -100 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient air (note 1) r j...f t 200 mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics ...
Description PNP PRE-BIASED 100 mA SOT-323 SURFACE MOUNT TRANSISTOR 进步党预偏置100毫安的SOT - 323表面贴装晶体

File Size 65.24K  /  3 Page

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