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MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
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| Part No. |
BCR12CS
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| OCR Text |
...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-6A/... |
| Description |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE PLANAR PASSIVATION TYPE
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| File Size |
75.72K /
5 Page |
 View
it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR10CS
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| OCR Text |
...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-5A/... |
| Description |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
75.46K /
5 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR12PM
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| OCR Text |
...s 0.5C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-6.0... |
| Description |
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
82.72K /
5 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
BCR10CS
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| OCR Text |
...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-5A/... |
| Description |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
93.39K /
5 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
|
| Part No. |
BCR12CS
|
| OCR Text |
...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-6A/... |
| Description |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
93.65K /
5 Page |
View
it Online |
Download Datasheet |
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|
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Mitsubishi Electric Corporation
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| Part No. |
BCR12
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| OCR Text |
...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-6A/... |
| Description |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
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| File Size |
98.71K /
5 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
BCR16CS
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| OCR Text |
...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-8A/... |
| Description |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
92.63K /
5 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
BCR6 BCR6AM
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| OCR Text |
...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-3A/... |
| Description |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
98.35K /
5 Page |
View
it Online |
Download Datasheet |
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