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GeneSiC Semiconductor, ...
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| Part No. |
GB2X50MPS12-227
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| OCR Text |
...d for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury including but not limited to equipment used in the operation o... |
| Description |
Silicon Carbide Power Schottky Diode
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| File Size |
2,445.52K /
7 Page |
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it Online |
Download Datasheet
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GeneSiC Semiconductor, ...
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| Part No. |
GB2X40MPS12-227
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| OCR Text |
...d for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury including but not limited to equipment used in the operation o... |
| Description |
Silicon Carbide Power Schottky Diode
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| File Size |
2,405.10K /
7 Page |
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it Online |
Download Datasheet |
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Melexis Microelectronic...
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| Part No. |
MLX90807LUFCDA-004WB MLX90808LUFCDA-004WB
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| OCR Text |
...stone bridge configuration are implanted on the edges of a silicon membrane and transform the stress induced by the pressure on the membrane into an electrical signal. an analog chain interacting with a digital core performs the condi... |
| Description |
Integrated Relative and Absolute Pressure Sensors
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| File Size |
205.49K /
7 Page |
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it Online |
Download Datasheet |
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BOPOLARICS
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| Part No. |
BPT1819E12
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| OCR Text |
...y are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization. absolute maximum ratings: symbol parameters rating units v ces collector-base voltage 40 ... |
| Description |
NPN silicon microwave power transistor.
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| File Size |
11.73K /
1 Page |
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it Online |
Download Datasheet |
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BOPOLARICS
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| Part No. |
BPT1819E10
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| OCR Text |
...y are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization. absolute maximum ratings: symbol parameters rating units v ces collector-base voltage 40 ... |
| Description |
NPN silicon microwave power transistor.
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| File Size |
13.33K /
1 Page |
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it Online |
Download Datasheet |
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Price and Availability
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