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Advanced Power Technology Ltd.
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| Part No. |
APT5010JLC
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V MIN TYP MAX UNIT
5200 1050 200 150 27 75 11 12 30 6
nC pF
Gate-Source Charge
Gate-Dr...895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,52... |
| Description |
POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
34.93K /
2 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5010JLL
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V MIN TYP MAX UNIT
4410 900 69 110 29 50 15 13 32 7
nC pF
Gate-Source Charge
Gate-Drai...895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,52... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
51.35K /
2 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5010JVFR
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 M...895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
... |
| Description |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
73.63K /
4 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
Advanced Power Technology, Ltd.
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| Part No. |
APT5010JVR
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN...895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
... |
| Description |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
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| File Size |
71.26K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technolo...
Advanced Power Technology Ltd.
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| Part No. |
APT5010LLC APT5010B2LC APT5010B2LC-06
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6W MI...895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 ... |
| Description |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
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| File Size |
64.96K /
4 Page |
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it Online |
Download Datasheet |
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Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT5010LVFR APT20M22LVFR
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 M...895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 ... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm
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| File Size |
66.12K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT5010LVR
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN...895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 ... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm
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| File Size |
64.27K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
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| Part No. |
APT5012 APT5012WVR
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN...895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 ... |
| Description |
POWER MOS V 500V 40A 0.120 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
61.40K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
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| Part No. |
APT5014B2LC APT5014LLC APT5014
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V MIN TYP MAX UNIT
3780 720 160 110 25 65 10 17 23 5
nC pF
Gate-Source Charge
Gate-Dra...895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 ... |
| Description |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
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| File Size |
34.16K /
2 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT5014B2VR
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| OCR Text |
...itions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN...895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm
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| File Size |
61.78K /
4 Page |
View
it Online |
Download Datasheet |
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