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mobility Datasheet PDF File

For mobility Found Datasheets File :: 592 Search Time::1.016ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MGA-52543- MGA-52543-TR2 MGA-52543-TR1 MGA-52543-BLK MGA52543
OCR Text	...MT (Pseudomorphic High Electron mobility Transistor) process. It is housed in the SOT-343 (SC70 4-lead) package. This package offers miniature size (1.2 mm by 2.0 mm), thermal dissipation, and RF characteristics. Vd 5V 360 pF 22 nH * 1....
Description	Low Noise Amplifier
File Size	211.32K / 16 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF4916 MGF4916G MGF4919G MGF491XG 491XG MGF491XGSERIES
OCR Text	...er-low-noise HEMT(High Electron mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.00.2 1.850.2 1 Unit:millimeters minimumu parasitic losse...
Description	SUPER LOW NOISE InGaAs HEMT From old datasheet system
File Size	18.48K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Electronic Theatre Controls, Inc.
Part No.	RMPA0913C-58
OCR Text	...n's Pseudomorphic High Electron mobility Transistor (pHEMT) process. Positive supply voltage of 3.5V, nominal Power Added Efficiency of 56%, typical, at power out of 31.5 dBm Power Added Efficiency of 40%, typical, for CDMA power out of 28....
Description	3.5V AMPS/CDMA Power Amplifier
File Size	254.72K / 6 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	FP750SOT343
OCR Text	...aAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 m x 750 m Schottky barrier gate, defined by electron-beam ph...
Description	PACKAGED LOW NOISE, MEDIUM POWER PHEMT
File Size	54.79K / 3 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP6836SOT343
OCR Text	...aAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 m x 360 m Schottky barrier gate, defined by electron-beam photolithography. Th...
Description	PACKAGED MEDIUM POWER PHEMT
File Size	65.89K / 2 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LPD200SOT343
OCR Text	...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances....
Description	PACKAGED HIGH DYNAMIC RANGE PHEMT
File Size	66.81K / 2 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	NE321000 NE321000-
OCR Text	... hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES * Super Low Noise Figure & High Associa...
Description	TRANSISTOR \| JFET \| N-CHANNEL \| 4V V(BR)DSS \| 15MA I(DSS) \| CHIP 晶体管\|场效应\| N沟道\| 4V五（巴西）直\| 15mA的我（直）\|芯片 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
File Size	46.74K / 12 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE3210S01 NE3210S01-T1 NE3210S01-T1B
OCR Text	... hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES * Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13....
Description	Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
File Size	60.47K / 16 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE32400 NE24200
OCR Text	...d undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES * Super Low Noise Figure & High Associated Gain NF...
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
File Size	84.47K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A
OCR Text	... hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 1.78 0.2 1 L L FEATURES * Super Low No...
Description	KJ 55C 55#22 SKT PLUG C到Ku波段超低噪声放大器N沟道黄建忠场效应 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	62.22K / 12 Page	View it Online	Download Datasheet

For mobility Found Datasheets File :: 592 Search Time::1.016ms
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