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Bourns, Inc.
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Part No. |
TISP83121D TISP83121DR
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OCR Text |
...the device chip is a four-layer npnp silicon thyristor structure which has an electrode connection to every layer. for negative overvoltage protection the tisp83121d is used in a common anode configuration with the voltage to be limited app... |
Description |
22 A, SILICON SURGE PROTECTOR, MS-012AA SOIC-8 TISP Thyristor Overvoltage Protectors Dual Gate Unidirectional 22 A, SILICON SURGE PROTECTOR, MS-012AA
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File Size |
200.90K /
5 Page |
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