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  rdrams Datasheet PDF File

For rdrams Found Datasheets File :: 108    Search Time::0.844ms    
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    OKI[OKI electronic componets]
OKI electronic components
Part No. MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C50 MSM5718C50-60GS-K MD5764802-60MC
OCR Text ...using interleaved transactions. rdrams are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-perfor...
Description 64Mb(8Mx8) concurrent RDRAM
From old datasheet system
(MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
18Mb(2Mx9) concurrent RDRAM

File Size 545.07K  /  46 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5718B70
OCR Text ...cilitate large block transfers. rdrams are general purpose high-performance memory devices suitable for use in a broad range of applications including pc and consumer main memory, graphics, video, and any other application where high-perfor...
Description 18-Megabit RDRAM (2M x 9) 18兆位的RDRAM米9

File Size 266.93K  /  40 Page

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    K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R44

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7
OCR Text ... The architecture of the Direct rdrams allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus ...
Description 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

File Size 4,046.09K  /  64 Page

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    Austin Semiconductor, Inc
Part No. MT6V16M18F2-3C
OCR Text ...e serially multiplexed onto the rdrams i/o pins as eight 16-bit words. the mt6v16m18 rdram is a general-purpose, high- performance, packet-oriented, dynamic random- access memory containing 301,989,888 bits. the mt6v16m18 is internally conf...
Description 16M X 18 RAMBUS, 45 ns, PBGA84 FBGA-84

File Size 106.29K  /  4 Page

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    Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
Part No. HYMR16418H-850 HYMR13218H-840 HYMR14818H-840 HYMR13216H-653 HYMR13216H-840 HYMR13216H-745 HYMR13216H-845 HYMR13218H-845
OCR Text rdrams preliminary this document is a general product description and is subject to change without notice. hyundai electronics does not assume any responsibility for use of circuits described. no patent licenses are implied. rev. 1.0/ dec....
Description 64M X 18 RAMBUS MODULE, 50 ns, DMA184 RIMM-184
32M X 18 RAMBUS MODULE, 40 ns, DMA184 RIMM-184
48M X 18 RAMBUS MODULE, 40 ns, DMA184 RIMM-184
32M X 16 RAMBUS MODULE, 53 ns, DMA184
32M X 16 RAMBUS MODULE, 40 ns, DMA184
32M X 16 RAMBUS MODULE, 45 ns, DMA184
32M X 18 RAMBUS MODULE, 45 ns, DMA184

File Size 204.99K  /  17 Page

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    NEC, Corp.
Part No. 128MD-40-800
OCR Text ... the architecture of the direct rdrams allows the highest sustained bandwidth for multiple, simulta- neous randomly addressed memory transactions. the separate control and data buses with independent row and column control yield over 95...
Description 8M X 16 DIRECT RAMBUS DRAM, 40 ns, PBGA62 CENTER BONDED, BGA-62

File Size 2,646.94K  /  66 Page

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    HYB25M128160C-840 HYB25R144180C-840 HYB25R128160C-840 HYB25M144180C-840 HYB25M128160C-653

Infineon Technologies AG
Part No. HYB25M128160C-840 HYB25R144180C-840 HYB25R128160C-840 HYB25M144180C-840 HYB25M128160C-653
OCR Text ... the architecture of the direct rdrams allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. the separate control and data buses with independent row and column control yield over 95% bus ...
Description 8M X 16 DIRECT RAMBUS DRAM, 40 ns, PBGA62 FBGA-62
8M X 18 DIRECT RAMBUS DRAM, 40 ns, PBGA62 FBGA-62
8M X 16 DIRECT RAMBUS DRAM, 53 ns, PBGA62

File Size 931.25K  /  92 Page

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    http://
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R271669B-NMCG6 K4R441869B-NMCG6 K4R441869B-NMCK7 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R441869B-NCK7 K4R441869B-NCK8
OCR Text ... the architecture of the direct rdrams allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. the separate control and data buses with independent row and column control yield over 95%...
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM

File Size 309.32K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM416RD8AS-RBM80
OCR Text ... the architecture of the direct rdrams allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. the separate control and data buses with independent row and column control yield over 95% bus...
Description 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package

File Size 3,846.56K  /  64 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4R271669B-NCK7 K4R271669B-MCK7 K4R271669B-MCK8 K4R271669B-NCK8 K4R271669B-NCG6 K4R271669B-MCG6 K4R441869B-MCK8 K4R441869B-MCK7 K4R441869B-MCG6 K4R441869B-NCG6
OCR Text ... the architecture of the direct rdrams allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. the separate control and data buses with independent row and column control yield over 95%...
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM 256 × 16/18位32秒银行直接RDRAMTM

File Size 314.70K  /  20 Page

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For rdrams Found Datasheets File :: 108    Search Time::0.844ms    
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