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  rg-58a u Datasheet PDF File

For rg-58a u Found Datasheets File :: 65    Search Time::2.656ms    
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    IRF3808PBF

International Rectifier
Part No. IRF3808PBF
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S ...58A 82A 480 A 0.01 320 Fig 12a. unclamped Inductive Test Circuit V(BR)DSS tp 160 ...
Description HEXFET Power MOSFET

File Size 206.94K  /  9 Page

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    IRF3808SPBF

International Rectifier
Part No. IRF3808SPBF
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S ...58A 82A 480 A 0.01 320 Fig 12a. unclamped Inductive Test Circuit V(BR)DSS tp 160 ...
Description AuTOMOTIVE MOSFET

File Size 295.99K  /  11 Page

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    APL502B2 APL502L

Advanced Power Technolo...
Advanced Power Technology
Part No. APL502B2 APL502L
OCR Text ...= 15V VDD = 250V ID = 29A @ 25C RG = 0.6 MIN TYP APL502B2-L MAX uNIT 7485 1290 617 13 27 56 16 9000 1810 930 26 54 84 20 ns pF ...58A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse...
Description LINEAR MOSFET

File Size 68.66K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT50M65JFLL_03 APT50M65JFLL APT50M65JFLL03
OCR Text ...= 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDuCTIVE SWITCHING @ 125C VDD...58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -...
Description POWER MOS 7 R FREDFET

File Size 99.79K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT50M65JLL_03 APT50M65JLL APT50M65JLL03
OCR Text ...= 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDuCTIVE SWITCHING @ 125C VDD...58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -...
Description POWER MOS 7 R MOSFET

File Size 99.40K  /  5 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT50M80B2VFR APT50M80
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP ns MAX uNIT Amps Volts V/ns ns 58 232 2 (VGS = ...58A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0W, dt 1 Repetitive ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 58A 0.080 Ohm

File Size 33.67K  /  2 Page

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    ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M80LLC APT50M80B2LC
OCR Text ... RM VA FO AD IN VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C ns 7.1 MIN TYP MAX uNIT Amps Volts ns C (Body Diode) ...58A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description POWER MOS IV 500V 58A 0.080 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 35.16K  /  2 Page

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    ADPOW[Advanced Power Technology]
Part No. APT50M80LVFR APT50M80B2VFR APT50M80B2VFR_03 APT50M80B2VFR03
OCR Text ...= 15V VDD = 250V ID = 58A @ 25C RG = 0.6 MIN TYP MAX uNIT pF 8797 1286 562 423 41 214 14 25 64 23 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOuRCE-DRAIN DIODE...
Description POWER MOS V

File Size 93.45K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT50M80LVR APT50M80 APT50M80B2VR
OCR Text ...A FO AD IN 151 VDD = 0.5 VDSS RG = 0.6y ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C ...58A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description POWER MOS V 500V 58A 0.080 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 37.07K  /  2 Page

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