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ADPOW[Advanced Power Technology]
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Part No. |
APT50M65JFLL_03 APT50M65JFLL APT50M65JFLL03
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OCR Text |
...= 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDuCTIVE SWITCHING @ 125C VDD...58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -... |
Description |
POWER MOS 7 R FREDFET
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File Size |
99.79K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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Part No. |
APT50M65JLL_03 APT50M65JLL APT50M65JLL03
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OCR Text |
...= 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDuCTIVE SWITCHING @ 125C VDD...58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -... |
Description |
POWER MOS 7 R MOSFET
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File Size |
99.40K /
5 Page |
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it Online |
Download Datasheet
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Advanced Power Technolo... ADPOW[Advanced Power Technology]
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Part No. |
APT50M80B2VFR APT50M80
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OCR Text |
...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP
ns
MAX
uNIT Amps Volts V/ns ns
58
232
2
(VGS = ...58A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0W, dt
1 Repetitive ... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 58A 0.080 Ohm
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File Size |
33.67K /
2 Page |
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it Online |
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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Part No. |
APT50M80LLC APT50M80B2LC
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OCR Text |
... RM VA FO AD IN
VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C
ns
7.1
MIN
TYP
MAX
uNIT Amps Volts ns C
(Body Diode)
...58A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Te... |
Description |
POWER MOS IV 500V 58A 0.080 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
35.16K /
2 Page |
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it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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Part No. |
APT50M80LVR APT50M80 APT50M80B2VR
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OCR Text |
...A FO AD IN
151
VDD = 0.5 VDSS RG = 0.6y ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode)
2
ns
MAX
uNIT Amps Volts ns C
...58A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Te... |
Description |
POWER MOS V 500V 58A 0.080 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
37.07K /
2 Page |
View
it Online |
Download Datasheet
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