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  to-220smd Datasheet PDF File

For to-220smd Found Datasheets File :: 63    Search Time::1.047ms    
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    2SJ606 2SJ606-S 2SJ606-Z 2SJ606-ZJ

NEC
Part No. 2SJ606 2SJ606-S 2SJ606-Z 2SJ606-ZJ
OCR Text ...06-S 2SJ606-ZJ 2SJ606-Z PACKAGE TO-220AB TO-262 TO-263 to-220smd Note FEATURES * Super low on-state resistance: RDS(on)1 = 15 m MAX. (VGS = -10 V, ID = -42 A) RDS(on)2 = 23 m MAX. (VGS = -4.0 V, ID = -42 A) * Low input capacitance: Cis...
Description MOS FIELD EFFECT TRANSISTOR

File Size 73.39K  /  7 Page

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    2SJ607 2SJ607-S 2SJ607-Z 2SJ607-ZJ

NEC
Part No. 2SJ607 2SJ607-S 2SJ607-Z 2SJ607-ZJ
OCR Text ...07-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 to-220smd Note FEATURES * Super low on-state resistance: RDS(on)1 = 11 m MAX. (VGS = -10 V, ID = -42 A) RDS(on)2 = 16 m MAX. (VGS = -4.0 V, ID = -42 A) * Low input capacitance: Cis...
Description MOS FIELD EFFECT TRANSISTOR

File Size 73.17K  /  7 Page

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    2SK3435 2SK3435-S 2SK3435-Z

NEC Corp.
NEC[NEC]
Part No. 2SK3435 2SK3435-S 2SK3435-Z
OCR Text ...435 2SK3435-S 2SK3435-Z PACKAGE TO-220AB TO-262 to-220smd DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES * Super low on-state resistance: RDS(on)1 = 14 m M...
Description MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 46.65K  /  4 Page

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    2SK3434-S 2SK3434-Z 2SK3434

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3434-S 2SK3434-Z 2SK3434
OCR Text ...434 2SK3434-S 2SK3434-Z PACKAGE TO-220AB TO-262 to-220smd DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES * Super low on-state resistance: RDS(on)1 = 20 m M...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
MOS Field Effect Transistor

File Size 46.77K  /  4 Page

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    2SK3430 2SK3430-S 2SK3430-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3430 2SK3430-S 2SK3430-Z
OCR Text ...430 2SK3430-S 2SK3430-Z PACKAGE TO-220AB TO-262 to-220smd DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES * Super low on-state resistance: 5 5 RDS(on)1 = 7....
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
MOS Field Effect Transistor

File Size 46.66K  /  4 Page

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    NEC Corp.
NEC[NEC]
Part No. 2SK3481-Z 2SK3481-ZJ 2SK3481 2SK3481-S
OCR Text ...-S 2SK3481-ZJ 2SK3481-Z PACKAGE TO-220AB TO-262 TO-263 to-220smdNote FEATURES * Super low on-state resistance: RDS(on)1 = 50 m MAX. (VGS...220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain t...
Description SWITCHING N-CHANNEL POWER MOS FET

File Size 74.77K  /  8 Page

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    J603

NEC
Part No. J603
OCR Text to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in eve...220smd note note to-220smd package is produced only in japan. (to-220ab) (to-262) (to-263, to-22...
Description Search --To 2SJ603

File Size 133.86K  /  8 Page

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    NEC Corp.
NEC[NEC]
http://
Part No. 2SK3570-Z 2SK3570-ZK 2SK3570 2SK3570-S
OCR Text ...70 2SK3570-S 2SK3570-ZK PACKAGE TO-220AB TO-262 TO-263 to-220smd Note FEATURES *4.5V drive available. *Low on-state resistance, RDS(on)1 = 12 m MAX. (VGS = 10 V, ID = 24 A) *Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = ...
Description 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
SWITCHING N-CHANNEL POWER MOSFET

File Size 80.35K  /  8 Page

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    http://
NEC[NEC]
NEC Corp.
Part No. 2SK3571 2SK3571-S 2SK3571-Z 2SK3571-ZK 2SK3571-ZK-AZ
OCR Text ...71 2SK3571-S 2SK3571-ZK PACKAGE TO-220AB TO-262 TO-263 to-220smd Note FEATURES *4.5V drive available. *Low on-state resistance, RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A) *Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID =...
Description SWITCHING N-CHANNEL POWER MOSFET
48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 MP-25ZK, 3 PIN

File Size 80.79K  /  8 Page

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For to-220smd Found Datasheets File :: 63    Search Time::1.047ms    
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