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USHA India LTD
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| Part No. |
2SC9011
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| Description |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
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| File Size |
76.14K /
2 Page |
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it Online |
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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
ASI10652 TVU150
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| Description |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
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| File Size |
17.88K /
1 Page |
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it Online |
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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314A
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| Description |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
16.54K /
1 Page |
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it Online |
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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
ASI10730 VHB50-28S
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| Description |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
16.22K /
1 Page |
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it Online |
Download Datasheet |
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Advanced Semiconductor, Inc.
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| Part No. |
ASI10593 HF10-12S
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| Description |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
16.69K /
1 Page |
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it Online |
Download Datasheet |
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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
ASI10592 HF10-12F
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| Description |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
17.26K /
1 Page |
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it Online |
Download Datasheet |
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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10629 ASI4000 AVD150 HF75-28F MLN1037S
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| Description |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
17.26K /
1 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp.
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| Part No. |
IRFY044CM
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| Description |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
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| File Size |
142.06K /
6 Page |
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it Online |
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