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  vceo-600v Datasheet PDF File

For vceo-600v Found Datasheets File :: 273    Search Time::1.36ms    
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    QM100DY-2HBK

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM100DY-2HBK
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=100A, IB1=0.2A, -IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) ...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 101.55K  /  5 Page

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    QM100DY-2HK

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM100DY-2HK
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=100A, IB1=-IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conduc...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 100.38K  /  5 Page

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    QM100DY-HK QM100DY-H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. QM100DY-HK QM100DY-H
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=1.3A -IC=100A (diode forward voltage) IC=100A...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CAP 4.7UF X7R 50V /-20% C_1812

File Size 95.28K  /  5 Page

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    QM100DY-H QM100DY-HBK

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM100DY-H QM100DY-HBK
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=0.13A -IC=100A (diode forward voltage) IC=100...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 99.22K  /  5 Page

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    QM100HY-2 QM100HY-2H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM100HY-2 QM100HY-2H
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=100A, IB1=-IB2=2A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. ...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 78.64K  /  5 Page

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    QM100HY-H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM100HY-H
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=1.3A -IC=100A (diode forward voltage) IC=100A...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 77.46K  /  5 Page

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    QM100TX1-H QM100

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. QM100TX1-H QM100
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=100A, IB=3A -IC=100A (diode forward vo...
Description HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, LED or EL Backlight

File Size 84.56K  /  5 Page

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    QM100 QM100TX1-HB

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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. QM100 QM100TX1-HB
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=100A, IB=150mA IC=-100A (diode forward...
Description HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, STN Blue
CAP, CHIP, 1812, 16V, X7R, 10UF
大功率开关使用绝缘型

File Size 86.83K  /  5 Page

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    QM150DY-24BK QM150

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM150DY-24BK QM150
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=150A, IB1=0.3A, -IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 82.55K  /  5 Page

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    QM150DY-24K QM150

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM150DY-24K QM150
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=150A, IB1=-IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conduc...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 81.86K  /  5 Page

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For vceo-600v Found Datasheets File :: 273    Search Time::1.36ms    
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