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  w charge Datasheet PDF File

For w charge Found Datasheets File :: 76962    Search Time::2.922ms    
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    DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26

DYNEX[Dynex Semiconductor]
Part No. DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text ....008 0.016 135 Units o C/w o C/w C/w C/w C/w o o Double side Single side o Rth(c-h) Thermal resistance - case t...charge QS - (C) 1000 IT = 1250A IT = 500A Min. value Gate trigger voltage VGT - (V) Puls...
Description Phase Control Thyristor

File Size 114.80K  /  8 Page

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    DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text ....008 0.016 135 Units o C/w o C/w C/w C/w C/w o o Double side Single side o Rth(c-h) Thermal resistance - case t...charge IT = 1000A VR = 100V 100 Table gives pulse power PGM in watts Pulse width s 100 200 50...
Description Phase Control Thyristor

File Size 108.66K  /  8 Page

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ....008 0.016 185 Units o C/w o C/w C/w C/w C/w o o Double side Single side o Rth(c-h) Thermal resistance - case t...charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase =...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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    DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG

DYNEX SEMICONDUCTOR LTD
DYNEX[Dynex Semiconductor]
Part No. DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG
OCR Text ....008 0.016 160 Units o C/w o C/w C/w C/w C/w o o Double side Single side o Rth(c-h) Thermal resistance - case t...charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase =...
Description Rectifier Diode

File Size 96.08K  /  7 Page

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    DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49

DYNEX[Dynex Semiconductor]
Part No. DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49
OCR Text ....008 0.016 160 Units o C/w o C/w C/w C/w C/w o o Double side Single side o Rth(c-h) Thermal resistance - case t...charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase =...
Description Rectifier Diode

File Size 96.53K  /  7 Page

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    DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60

DYNEX[Dynex Semiconductor]
Part No. DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text ....008 0.016 160 Units o C/w o C/w C/w C/w C/w o o Double side Single side o Rth(c-h) Thermal resistance - case t...charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase =...
Description Rectifier Diode

File Size 94.33K  /  7 Page

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    TPCA8135

Toshiba Semiconductor
Part No. TPCA8135
OCR Text ... 34 -5 175 -55 to 150 unit v a w w w mj a note: using continuously under heavy loads (e.g. the application of high temperatur...charge characteristics (t gate charge characteristics (t gate charge characteristics (t gate charge ...
Description MOSFETs Silicon P-Channel MOS

File Size 302.16K  /  9 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...0 20 (Note 1a) Units V V A w 11.5 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c...charge Gate-Source charge Gate-Drain charge VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 10 ...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    SamHop
Part No. STB60L60A
OCR Text ...olv ds v gs i dm e as 1.32 62.5 w a p d c 76 -55 to 150 i d units parameter 60 50 145 c/w vv 20 t c =25 c gate-source voltage drain-source ...charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =15v i d =1a v gs =10v r...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 277.41K  /  8 Page

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    FQP20N06 FQP20N06TSTU

Fairchild Semiconductor
Part No. FQP20N06 FQP20N06TSTU
OCR Text ...wer dissipation (t c = 25c) 53 w - derate above 25c 0.35 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum ...charge v ds = 48 v, i d = 20 a, v gs = 10 v ...
Description N-Channel QFET MOSFET 60 V, 20 A, 60 m

File Size 664.67K  /  8 Page

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