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IRF[International Rectifier]
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Part No. |
IRFPS40N60K
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OCR Text |
... S VDS = 50V, ID = 24A 330 ID = 38A 84 nC VDS = 480V 150 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 38A ns --- RG = 4.3 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, ... |
Description |
40 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC HEXFETPower MOSFET HEXFET-R Power MOSFET
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File Size |
137.34K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHNA9160
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OCR Text |
...0 BVDSS -100V RDS(on) 0.087 ID -38a
Features:
s s s s s s s s s s s s s
Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutro... |
Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38a)
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File Size |
123.17K /
4 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3 FSJ260R3 FSJ260R4 FSJ160R3 FSJ160R4
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OCR Text |
...)12
VGS = 12V, ID = 60A ID = 38A, VGS = 12V
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage Input Capacitance O... |
Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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File Size |
56.45K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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