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0.08-1.10ma Datasheet PDF File

For 0.08-1.10ma Found Datasheets File :: 8368 Search Time::8.125ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ504
OCR Text	... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 Case Temperature Tc (C) 160 -5, -10 A 100 30 10...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ530 2SJ530L 2SJ530S
OCR Text	... * Low on-resistance R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching. Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	56.07K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ532
OCR Text	... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.69K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ533
OCR Text	... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc = -25 C 10 3 1 0.3 V DS = -10 V ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.60K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ535
OCR Text	... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc = -25 C 10 3 1 0.3 V DS = -10 V ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.39K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor Hitachi Semiconductor
Part No.	2SJ539
OCR Text	... * Low on-resistance R DS(on) = 0.16 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220AB D ...08 + 0.1 4.440.2 1.260.15 18.5 0.5 1.20.1 1.270.1 1.5 max 14.0 0.5 0.50.1 7.8 0.5 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.99K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ540
OCR Text	... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220AB D ...08 + 0.1 4.440.2 1.260.15 18.5 0.5 1.20.1 1.270.1 1.5 max 14.0 0.5 0.50.1 7.8 0.5 ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.52K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ541
OCR Text	... * Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D...08 0 -40 0 40 80 120 160 Case Temperature Tc (C) 0.1 -0.1 -0.3 -1 -3 -10 -30 Drain Current I D...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.02K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ542
OCR Text	... * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D...08 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.62K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ543
OCR Text	... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.32K / 9 Page	View it Online	Download Datasheet

For 0.08-1.10ma Found Datasheets File :: 8368 Search Time::8.125ms
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