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  1.25v-vf Datasheet PDF File

For 1.25v-vf Found Datasheets File :: 3556    Search Time::13.484ms    
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    ZHCS506

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZHCS506
OCR Text 1 - September 1997 FEATURES: * Low V F * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DET...25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed condition...
Description High Current Schottky Diode
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>

File Size 100.31K  /  3 Page

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    ZHCS750

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZHCS750
OCR Text 1 ZHCS750 C 1 FEATURES: * Low V F * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK D...25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed condition...
Description High Current Schottky Diode
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT

File Size 165.10K  /  3 Page

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    ZHCS756

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZHCS756
OCR Text 1- NOVEMBER 1997 FEATURES: * Low V F * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAI...25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed condition...
Description SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
High Current Schottky Diode
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT

File Size 161.16K  /  3 Page

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    IRFS630A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS630A
OCR Text ...0V Low RDS(ON) : 0.333 (Typ.) 1 IRFS630A BVDSS = 200 V RDS(on) = 0.4 ID = 6.5 A TO-220F 2 3 1.Gate 2. Drain 3. Source Ab...25V,f =1MHz See Fig 5 VDD=100V,ID=9A, RG=12 See Fig 13 VDS=160V,VGS=10V, ID=9A See Fig 6 & Fig 12 ...
Description Advanced Power MOSFET

File Size 259.74K  /  7 Page

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    MA1100-M MA8100-M MA8150-M MN3111H MA1150-M MN3111 MA723

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. MA1100-M MA8100-M MA8150-M MN3111H MA1150-M MN3111 MA723
OCR Text ...C2+ C1+ C1- VCC1 C4+ OVDD HD 1 2 3 4 5 6 7 8 9 10 11 12 ISUB CH1 IV1 IV3 CH2 SENSE2 VOUT- VIN - GND N.C. N.C. C4 - 37 38 39 40 41 4...25V Notes for positive regulated voltage for negative regulated voltage Zener diodes MA8...
Description Vertical Driver LSI for Video Camera CCD Area Image Sensor

File Size 65.84K  /  11 Page

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    SP6648LED SP6648LEDEB SP6648EU

SIPEX[Sipex Corporation]
Part No. SP6648LED SP6648LEDEB SP6648EU
OCR Text ...K USING THE EVALUATION BOARD 1) Powering Up the SP6648LED Circuit The SP6648LED Evaluation Board can be powered from inputs from a +1.8V ...25V and begin to regulate. The output voltage will go from 3.3V to 3.68V (=VF+0.61V) accordingly (as...
Description Evaluation Board Manual

File Size 95.74K  /  5 Page

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    SP6682UEB SP6682EU

SIPEX[Sipex Corporation]
Part No. SP6682UEB SP6682EU
OCR Text ... current @ 2.8V input Less than 1.5uA shutdown current 10 pin MSOP SP6682 Evaluation Board Schematics LEDA C2 2.2uF 1 J1 SP66...25V is: Vth = 1.25V (1 + R1 R 2 ) (4) which can be expressed as R1: R 1 = (Vth 1.25 - 1) R 2 (5) Fo...
Description Evaluation Board Manual

File Size 103.52K  /  5 Page

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    SSF17N60A

FAIRCHILD[Fairchild Semiconductor]
Part No. SSF17N60A
OCR Text ...on) = 0.45 ID = 9 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD ...25V,f =1MHz See Fig 5 VDD=300V,ID=17A, RG=5.3 See Fig 13 VDS=480V,VGS=10V, ID=17A See Fig 6 & Fig 1...
Description Advanced Power MOSFET

File Size 268.83K  /  7 Page

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU2
OCR Text ...450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ...450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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