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				TriQuint Semiconductor,Inc. TriQuint Semiconductor, Inc.
Part No.	TGL4201-10-EPU TGL4201-00-EPU TGL4201-06-EPU TGL4201-03-EPU TGL4201-02-EPU
OCR Text	...tenuators Probed in Fixtures 10 dB Attenuator 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 0 2dB 3dB A tte n u a tio n (d B ) ...or above 300C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should...
Description	Wideband Fixed Attenuators 0 MHz - 40000 MHz RF/MICROWAVE FIXED ATTENUATOR
File Size	469.67K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	MH64D72KLH-10 MH64D72KLH-75
OCR Text	10 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module DESCRIPTION The MH64D72KLH is 67108864 - word...or main memory in computer systems and easy to interchange or add modules. 93pin 1pin FEATU...
Description	4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
File Size	397.59K / 39 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	MH32D72KLH-10
OCR Text	10 2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module DESCRIPTION The MH32D72KLH is 33554432 - word...or main memory in computer systems and easy to interchange or add modules. 93pin 1pin FEATU...
Description	2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
File Size	398.60K / 40 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI [Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
Part No.	IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61LV5128-10K IS61LV5128-10KI IS61LV5128-10T IS61LV5128-10TI IS61LV5128-12B IS61LV5128-12BI IS61LV5128-12K IS61LV5128-12KI IS61LV5128-12T IS61LV5128-12TI IS61LV5128-15B 61LV5128 IS61LV5128 IS61LV5128-15BI IS61LV5128-15T IS61LV5128-15TI IS61LV5128-15K IS61LV5128-15KI
OCR Text	10, 12 and 15 ns * High-performance, low-power CMOS process * Multiple center power and ground pins for greater noise immunity * Easy memory...or refresh required * TTL compatible inputs and outputs * Single 3.3V power supply * Packages availa...
Description	IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
File Size	71.65K / 9 Page	View it Online	Download Datasheet

				NEC
Part No.	UPD444008LE-10 UPD444008LE-12 UPD444008LE-8
OCR Text	...ization * Fast access time : 8, 10, 12 ns (MAX.) * Output Enable input for easy application * Single +5.0 V power supply Ordering Informa...or /OE = VIH or /WE = VIL Operating supply current ICC /CS = VIL, II/O = 0 mA, Minimum cycle time St...
Description	4M-bit(512K-word x 8-bit) Fast SRAM
File Size	106.86K / 16 Page	View it Online	Download Datasheet

				NEC
Part No.	UPD444004LE-10 UPD444004LE-12 UPD444004LE-8
OCR Text	...ization * Fast access time : 8, 10, 12 ns (MAX.) * Output Enable input for easy application * Single +5.0 V power supply Ordering Informa...or /OE = VIH or /WE = VIL Operating supply current ICC /CS = VIL, II/O = 0 mA, Minimum cycle time St...
Description	4M-bit(1M-word x 4-bit) Fast SRAM
File Size	122.40K / 16 Page	View it Online	Download Datasheet

				NEC
Part No.	UPD444001LE-10 UPD444001LE-11 UPD444001LE-12
OCR Text	...ganization * Fast access time : 10, 11, 12 ns (MAX.) * Output Enable input for easy application * Single +5.0 V power supply Ordering Inf...or /OE = VIH or /WE = VIL Operating supply current ICC /CS = VIL, IOUT = 0 mA, Minimum cycle time St...
Description	4M-bit(4M-word x 1-bit) Fast SRAM
File Size	149.77K / 16 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 M5M4V16169DRT-8 M5M4V16169DTP M5M4V16169RT-15 M5M4V16169RT-10 M5M4V16169RT-8 M5M4V16169RT-7 M5M4V16169DTP-15 M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8
OCR Text	10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target ...or BWT or BWTW is initiated the same cycle as DWT1 or DWT1R, new data is loaded into the buffer and ...
Description	16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
File Size	733.86K / 64 Page	View it Online	Download Datasheet

				Altech corporation
Part No.	4-001-Q-10
OCR Text	10 rev - ch.no. - description original design date 11/2/2007 revised by Philipp E. PG 13.5 or M20 51 mm [2.0 in] 68 mm [2.7 in] R11.25 mm [.4 in] Plastic enclosure suited for non-illuminated push buttons with ...
Description	22 mm Thermoplastic Enclosure White/Black Operator Capacity 1
File Size	225.45K / 1 Page	View it Online	Download Datasheet

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