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1056-byte Datasheet PDF File

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				Toshiba Semiconductor
Part No.	TC58NVG1S8BFT00 TC58NVG1S3BFT00
OCR Text	...cks. The device has a 2112-byte/1056-word static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit ...
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	308.45K / 37 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00
OCR Text	...on the 2112- byte(x8 device) or 1056-word(x16 device) page and an erase operation can be performed in typical 2ms on a 128k-byte(x8 device) or 64k-word(x16 device) block. data in the data page can be read out at 50ns(1.8v device : 80ns) c...
Description	Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
File Size	737.72K / 40 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F1G08R0A K9K2G08U1A K9F1G08U0A
OCR Text	...+64)B x 64Pages x 1024 Blocks = 1056 Mbits Page Register 2K Bytes I/O 0 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle A0 A8 A12 A20 I/O 1 A1 A...byte data register and a 2112-byte cache register are serially connected to each other. Those serial...
Description	128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
File Size	879.50K / 37 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MC92052
OCR Text	...er/deinterleaver combination is 1056 * M payload byte periods. The deinterleaver is implemented using an external SRAM (Motorola MCM6306 or equivalent). Alternatively, the internal RAM can be used if the value of M is 1 or 2. Rx Cell Fun...
Description	Ultraframer DS3/E3/DS2/E2/DS1/E1/DS0 FTTC User Framer
File Size	28.35K / 6 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K9F1G08U0A
OCR Text	... x 1024 blocks = 1056 mbits row address page register ale pre 1024m + 32m bit nand flash array (2048 + 64 )byte x 65536 y-gating cache register row address column address column address data register & s/a flash memory 7 k...
Description	FLASH MEMORY
File Size	685.20K / 37 Page	View it Online	Download Datasheet

				Samsung
Part No.	K9F1G08U0M
OCR Text	...s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cyc...
Description	IC,EEPROM,NAND FLASH,128MX8,CMOS,TSSOP,48PIN,PLASTIC From old datasheet system
File Size	475.80K / 39 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M-Y K9K2G08U0M K9XXG08UXM-E K9XXG08UXM-K K9XXG08UXM-P K9XXG08UXM-Y K9XXG16UXM-E K9XXG16UXM-K K9XXG16UXM-P K9XXG16UXM-Y K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08Q0M-PCB0 K9K2G08U0M-VCB0 K9K2G08U0M-FCB0 K9K2G08Q0M-YCB0
OCR Text	... on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64Kword(X16 device) block. Data in the data page can be read out at 80ns(1.8V device) or 50ns(3.3...
Description	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
File Size	676.60K / 39 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MC92053
OCR Text	...er/deinterleaver combination is 1056 * M payload byte periods. The four interleavers are implemented together since the downstream frame alignment is synchronized among the four framers. This requires the same value of M to be used for all ...
Description	Quad FTTC Network Framer
File Size	32.52K / 6 Page	View it Online	Download Datasheet

				SAMSUNG
Part No.	K9K4G08U0M
OCR Text	...s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte. Th...
Description	512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
File Size	573.66K / 35 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K4G08U1M K9F2G16U0M K9F2G08U0M
OCR Text	...s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 30ns cycle time per byte(X8 ...
Description	256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
File Size	829.32K / 40 Page	View it Online	Download Datasheet

For 1056-byte Found Datasheets File :: 88 Search Time::1.359ms
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