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Infineon Technologies
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Part No. |
IPD26N06S2L-35
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OCR Text |
...t [W]
40 I D [A] 30
20
15
20
10
10
5
0 0 50 100 150 200
0 0 50 100 T C [C] 150 200
T C [C]
3 Safe operating...35
5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS
60
10 V 5V
6 Typ.... |
Description |
Power Transistor
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File Size |
181.46K /
8 Page |
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it Online |
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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Part No. |
BLL1214-35 BLL1214-35_1
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OCR Text |
...; Th 25 C - -65 - MIN. MAX. 75 15 110 +150 200 V V W C C UNIT
2002 Sep 27
2
Philips Semiconductors
Product specification
L-b...35
VALUE 1.1
UNIT K/W
TYP. - - - - - 2 300
MAX. - 5.5 10 - 125 - -
UNIT V V A A nA S ... |
Description |
L-band radar LDMOS transistor L-band radar LDMOS driver transistor From old datasheet system
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File Size |
57.83K /
8 Page |
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it Online |
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Osram Opto Semiconductors GmbH
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Part No. |
LBV19G-P2R1-35-1
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OCR Text |
...an ? optischer wirkungsgrad: 15 lm/w gruppierungsparameter: lichtst?rke, wellenl?nge; durchlassspannung verarbeitungsmethode: fr...35-1 bedeutet, dass auf dem gurt nur eine der helligkeitsgruppen p2, q1, q2 oder r1 enthalten ist.... |
Description |
Lead (Pb) Free Product - RoHS Compliant
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File Size |
267.14K /
15 Page |
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it Online |
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Price and Availability
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