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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM150E3U-24F
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| OCR Text |
.................................. 150a VCES ......................................................... 1200V Insulated Type 1-element in a pack...300 150 300 600 1200 150 300 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W V A C... |
| Description |
IGBT Modules:1200V
HIGH POWER SWITCHING USE
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| File Size |
82.94K /
4 Page |
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it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM150DU-34KA
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| OCR Text |
... = 0V IC = 15mA, VCE = 10V IC = 150a, VGE = 15V, Tj = 25C IC = 150a, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC =...300
COLLECTOR CURRENT, IC, (AMPERES)
250 200 150
12 10
250 200 150 100 50 0
COLLECTOR-E... |
| Description |
Dual IGBTMOD 150 Amperes/1700 Volts
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| File Size |
441.55K /
4 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM150DU-24NFH
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| OCR Text |
.................................. 150a VCES ......................................................... 1200V Insulated Type 2-elements in a pac...300 150 300 650 960 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310
Unit V V A A A A W W C C V... |
| Description |
HIGH POWER SWITCHING USE
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| File Size |
65.97K /
4 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM150DU-24F
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| OCR Text |
.................................. 150a VCES ......................................................... 1200V Insulated Type 2-elements in a pac...300 150 300 600 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W C C V N*m N*m g
... |
| Description |
HIGH POWER SWITCHING USE
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| File Size |
68.61K /
4 Page |
View
it Online |
Download Datasheet |
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|
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM150DU-24F
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| OCR Text |
... = 0V IC = 15mA, VCE = 10V IC = 150a, VGE = 15V, Tj = 25C IC = 150a, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC ...300 150 - Units nf nf nf ns ns ns ns ns C
Diode Reverse Recovery Time** Diode Reverse Recovery Ch... |
| Description |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
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| File Size |
90.31K /
4 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
CA3089_02 CA3089M1 FN561 CA3089 CA3089E
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| OCR Text |
...2 15 14 4 10 K 0.001 F 33K 0.5M 150a FULL SCALE
4
100 pF
5K
V+ = 12V 22H
C1 T (NOTE 8) C2 100 pF 9 1 10 51 3 0.01 F 2 15 14 10 K ...300 INPUT FM TUNER (NOTE 12) IF OUT CERAMIC FILTER (NOTE 13) 330 3 2 9
10 CA3089E CA3089E 6
2.... |
| Description |
FM IF System
OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT
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| File Size |
454.90K /
8 Page |
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it Online |
Download Datasheet |
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EUPEC[eupec GmbH]
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| Part No. |
BSM150GB60DLC
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| OCR Text |
...ate-emitter leakage current IC= 150a, VGE= 15V, Tvj= 25C IC= 150a, VGE= 15V, Tvj= 125C IC= 3,0mA, VCE= VGE, Tvj= 25C VCE sat
min.
VGE(th...300
250
Tvj = 25C Tvj = 125C
200
IC [A]
150
100
50
0 0,0 0,5 1,0 1,5 2,0 2,5... |
| Description |
IGBT-Modules
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| File Size |
74.09K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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