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  150ns tsop ind tempeeprom Datasheet PDF File

For 150ns tsop ind tempeeprom Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Avago Technologies, Ltd.
Part No. HSMS286L-BLK HSMS286L-TR1 HSMS286P-BLK HSMS286P-TR1 HSMS286R-BLK HSMS286R-TR1 HSMS285L-BLK
Description ARRAY OF indEPENDENT DIODES|tsop
BRIDGE/RING DIODE ARRAY|tsop 环二极管阵列|的tsop

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    X9279TB X9279TBI X9279TB-2.7

Xicor Inc.
Part No. X9279TB X9279TBI X9279TB-2.7
Description Single Digitally-Controlled (XDCP) Potentiometer 单数字控制(数字电位器)电位
IC,FLASH MEMORY,64 MB,120NS,3.0V,48 tsop
AM29DL800 FLASH MEM 8MB 70NS tsop-48

File Size 399.52K  /  24 Page

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    TC74HC251AP TC74HC251AF TC74HC251

Toshiba, Corp.
Toshiba Semiconductor
Part No. TC74HC251AP TC74HC251AF TC74HC251
Description Low Capacitance tsop-6 Diode-TVS Array for High Speed Data Lines Protection; Package: tsop-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 8通道多路复用器(3国)
8 CHANNEL MULTIPLEXER (3 STATE)

File Size 260.58K  /  6 Page

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    NTGS4141NT1G

ON Semiconductor
Part No. NTGS4141NT1G
Description Power MOSFET 30 V, 7.0 A, Single N-Channel, tsop-6; Package: tsop-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 107.01K  /  6 Page

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    M39208-10WNA6T M39208-12WNA1T M39208-12WNB6T M39208-12WNA5T M39208-12WNB5T M39208-15WNA6T M39208-12WNA6T M39208-10WNA1T

NUMONYX
STMicroelectronics N.V.
ST Microelectronics
意法半导
Part No. M39208-10WNA6T M39208-12WNA1T M39208-12WNB6T M39208-12WNA5T M39208-12WNB5T M39208-15WNA6T M39208-12WNA6T M39208-10WNA1T M39208NB M39208NA M39208-15WNB6T M39208-15WNB5T M39208-10WNA5T -M39208-12WNA5T M39208-10WNB5T M39208-15WNA5T M39208-15WNB6 M39208-10WNB6T M39208-12WNB6
Description 256K X 8 FLASH 2.7V PROM, 120 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 100 ns, PDSO32
RECTIFIER SCHOTTKY DUAL 5A 40V 110A-Ifsm 0.5Vf 0.2A-IR PowerDI-5 5K/REEL 单芯2 Mbit闪存4千位并行EEPROM存储
Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory 单芯2 Mbit闪存4千位并行EEPROM存储
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1.3V-vf 150ns 5uA-ir A405 5K/REEL-13
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1.3V-vf 150ns 5uA-ir DO-41 5K/REEL-13
RECTIFIER SCHOTTKY SINGLE 10A 40V 275A-Ifsm 0.51Vf 0.7A-IR PowerDI-5 5K/REEL
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.2V-vf 150ns 5uA-ir DO-41 5K/REEL-13
DIODE, SCHOTTKY, 40V, 10A, POWER DI 5
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.3V-vf 150ns 5uA-ir DO-41 5K/REEL-13

File Size 222.30K  /  30 Page

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    K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S280832F-UL75 K4S281632F-UL75 K4S280432F-UC75 K4S280432F-UL75 K4S281632F

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S280832F-UL75 K4S281632F-UL75 K4S280432F-UC75 K4S280432F-UL75 K4S281632F-UC60 K4S281632F-UC60_75 K4S281632F-UL60 K4S281632F-UL60_75 K4S281632F-UC60/75 K4S281632F-UL60/75 K4S280432F-UC750 K4S281632F-UL750
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 tsop-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 tsop-II免费(符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL

File Size 142.90K  /  14 Page

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    NTGS3136P NTGS3136PT1G

ON Semiconductor
Part No. NTGS3136P NTGS3136PT1G
Description -20V, -5.8A, Single P-Channel, tsop-6
Power MOSFET -20 V, -5.8 A, Single P-Channel, tsop-6

File Size 106.79K  /  5 Page

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 M368L2923DUN-LB3 M368L2923DUN-LCC M368L3324DUS-CCC M381L2923DUM-LB3 M381L2923DUM-CCC M368L6523DUS-CCC M368L2923DUN-CB3 M381L6523DUM-CB3 M381L6523DUM-CCC M368L2923DUN-CCC
Description DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 tsop-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 tsop-II免费(符合RoHS

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    ST Microelectronics
Part No. M28W231-120N1TR M28W231-120N6TR M28W231-180N5TR M28W231-150N1TR M28W231-100N1TR M28W231-120N5TR M28W231-150N5TR M28W231-150N6TR M28W231-180N6TR
Description 256K X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, tsop-40
256K X 8 FLASH 12V PROM, 180 ns, PDSO40 10 X 20 MM, tsop-40
256K X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, tsop-40
256K X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, tsop-40

File Size 46.29K  /  2 Page

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    K4H510838D-UC/LA2 K4H510838D-UC/LB0 K4H510838D-UC/LCC K4H511638D-UC/LB3 K4H511638D-UC/LCC K4H511638D-UC/LB0 K4H511638D-U

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H510838D-UC/LA2 K4H510838D-UC/LB0 K4H510838D-UC/LCC K4H511638D-UC/LB3 K4H511638D-UC/LCC K4H511638D-UC/LB0 K4H511638D-UC/LA2 K4H510838D-UC/LB3 K4H511638D-UC3 K4H510838D-UC3 K4H510838D-UC0 K4H511638D-UC2 K4H510838D-UC2 K4H510838D-UCC K4H511638D-UC0 K4H511638D-UCC K4H511638D-LB3 K4H511638D-LB0 K4H511638D-LA2 K4H510838D-LB0 K4H510838D-LB3 K4H510838D-LA2 K4H510838D-LCC
Description 512Mb D-die DDR SDRAM Specification 66 tsop-II with Pb-Free (RoHS compliant) 12Mb芯片DDR SDRAM的规格铅66 tsop-II免费(符合RoHS
DIODE ZENER SINGLE 500mW 8.8Vz 20mA-Izt 0.025 0.1uA-Ir 7 SOD-123 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 tsop-II免费(符合RoHS
DIODE ZENER SINGLE 200mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-323 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 tsop-II免费(符合RoHS
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70 12Mb芯片与DDR SDRAM的规格铅66 tsop-II免费(符合RoHS
512Mb D-die DDR SDRAM Specification 66 tsop-II with Pb-Free (RoHS compliant) 12Mb芯片与DDR SDRAM的规格铅66 tsop-II免费(符合RoHS
DIODE ZENER SINGLE 150mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 500mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-523 3K/REEL

File Size 359.26K  /  24 Page

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