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  160-channel Datasheet PDF File

For 160-channel Found Datasheets File :: 29251    Search Time::1.531ms    
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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. TK4P60DB
OCR Text ...1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 0 0.1 ? 0.3 1 100 ? 0.6 ? 0.9 v gs = 0...channel temperatur e (initial) t ch (c) test circuit waveform dc operation tc = 25c 200 160 ...
Description Silicon N Channel MOS Type (π-MOS?

File Size 291.66K  /  5 Page

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    hitachi
Part No. 2SK3157
OCR Text ...st 10 20 50 100 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 4 2SK3157 Body-Drain Diode Reverse Recovery Time...Channel Temperature Derating Repetitive Avalanche Energy E AR (mJ) 20 50 I AP = 20 A V DD =...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 57.88K  /  9 Page

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    74HC_HCT4351 74HC-HCT4351-CNV-15

NXP Semiconductors
Philips
Part No. 74HC_HCT4351 74HC-HCT4351-CNV-15
OCR Text ...to +125 - 270 240 195 - 210 180 160 - 240 210 180 UNIT VCC (V) VEE (V) IS (A) Vis VI TEST CONDITIONS min. typ. max. min. max. min. max. R...channel analog multiplexer/demultiplexer with latch DC CHARACTERISTICS FOR 74HC Voltages are refere...
Description 8-channel analog multiplexer/demultiplexer with latch

File Size 116.61K  /  17 Page

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    Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RD06HVF1-101 RD06HVF1
OCR Text ...ch(W) 40 20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C) Ids(A) 30 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 4 Ta=+25C Vgs=10V Vds VS. Ciss CHARACTERISTICS 60 50 40 Ciss(pF) Ta=+25C f=1MHz 3 Ids(A)...
Description MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

File Size 374.92K  /  8 Page

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    RD20HMF111

Mitsubishi Electric Semiconductor
Part No. RD20HMF111
OCR Text ...e 0 20 40 60 80 100 0 40 80 120 160 200 ambient temperature ta(c) c h a n n e l d i s s i p a t i o n p c h ( w ) vds-ids characteristics ...channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/...
Description RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W

File Size 484.33K  /  9 Page

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    NEC Corp.
Part No. MPD705101GM-100-8ED
OCR Text ...NFORMATION Part Number Package 160-pin plastic LQFP (fine pitch) (24 x 24 mm) PD705101GM-100-8ED PIN CONFIGURATION (TOP VIEW) * 160-...channel and one clocked serial interface (CSI) channel is provided. As the serial clock source, the ...
Description V831TM 32-BIT MICROPROCESSOR

File Size 310.76K  /  72 Page

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    FDS568208 FDS5682

Fairchild Semiconductor
Part No. FDS568208 FDS5682
OCR Text ... = 7.5A 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 0.50 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 9. No...Channel PowerTrench(R) MOSFET Typical Characteristics TA = 25C unless otherwise noted 1.15 NORMA...
Description N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mOhms
N-Channel PowerTrench MOSFET 60V, 7.5A, 21m ohm

File Size 429.10K  /  12 Page

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    2SK3149

Hitachi Semiconductor
Part No. 2SK3149
OCR Text ...A 15 A 5,10 A 0 40 80 120 160 Case Temperature Tc (C) 4 2SK3149 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Tim...Channel Temperature Derating 50 I AP = 20 A V DD = 50 V duty < 0.1 % Rg > 50 20 Reverse Drain C...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 51.30K  /  9 Page

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    WJCI[WJ Communication. Inc.]
Part No. AH118_06 AH118 AH118-89G AH118-89PCB1900 AH118-89PCB2140 AH118-89PCB900
OCR Text ...12 20 +24.7 +40.5 +18 +16.7 4.3 160 +5 Max 3500 Parameter Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR, Units MHz dB dB dB dBm dBm dBm dBm dB 4.0 900 20.4 -1...
Description ? Watt, High Linearity InGaP HBT Amplifier
? Watt, High Linearity InGaP HBT Amplifier

File Size 270.06K  /  8 Page

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    WJCI[WJ Communication. Inc.]
Part No. AH118-89PCB900 AH118 AH118-89G AH118-89PCB1900 AH118-89PCB2140
OCR Text ...12 20 +24.7 +40.5 +18 +16.7 4.3 160 +5 Max 3500 Parameter Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR, Units MHz dB dB dB dBm dBm dBm dBm dB 4.0 900 20.4 -1...
Description ? Watt, High Linearity InGaP HBT Amplifier
? Watt, High Linearity InGaP HBT Amplifier

File Size 258.27K  /  8 Page

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For 160-channel Found Datasheets File :: 29251    Search Time::1.531ms    
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