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  20a 600v Datasheet PDF File

For 20a 600v Found Datasheets File :: 1404    Search Time::1.563ms    
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    FGH80N60FD2 FGH80N60FD2TU

Fairchild Semiconductor
Part No. FGH80N60FD2 FGH80N60FD2TU
OCR Text ... 2.0 40A 8 40A 1.5 20a Common Emitter VGE = 15V 4 IC = 20a 80A 1.0 25 50 75 100 o 0 125 4 Case Temperature...600v, 80A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. V...
Description 600v, 80A Field Stop IGBT

File Size 647.17K  /  9 Page

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    IHW20N135R3

Infineon Technologies AG
Part No. IHW20N135R3
OCR Text ...rking package ihw20n135r3 1350v 20a 1.6v 175c h20r1353 pg-to247-3 g c e g c e 3 ihw20n135r3 ih-series rev.2.1,2011-05-03 tableofc...600v, i c =20.0a, v ge =0.0/15.0v, r g =15.0 w , l s =175nh, c s =40pf l s , c s from...
Description high power thyristor diode

File Size 2,205.02K  /  15 Page

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    APT68GA60B APT68GA60S

Microsemi Corporation
Part No. APT68GA60B APT68GA60S
OCR Text ... IC = 80A IC = 40A 2 IC = 20a 1 2 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 20a 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.15...
Description High Speed PT IGBT

File Size 209.33K  /  6 Page

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    APT68GA60LD40

Microsemi Corporation
Part No. APT68GA60LD40
OCR Text ... IC = 80A IC = 40A 2 IC = 20a 1 2 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 20a 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.15...
Description High Speed PT IGBT

File Size 240.00K  /  9 Page

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    Infineon Technologies
Part No. H30T90
OCR Text ...ctance g fs v ce =20v, i c =20a - 26 - s dynamic characteristic input capacitance c iss - 2617 - output capacitance c oss - 9...600v, i c =30a, v ge =0/15v, r g =15 , - 1.8 - mj switching characteristic, inductive load,...
Description IGBT

File Size 285.54K  /  12 Page

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    Infineon Technologies
Part No. H30T100
OCR Text ... 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a ...600v, v ge = 0/15v, r g =26.9 ? , dynamic test circuit in figure e) figure 10. typical switching...
Description IGBT

File Size 335.78K  /  12 Page

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    Micross Components
Part No. ICE20N170
OCR Text ...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 180 w t c = 25...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin...
Description N-Channel Enhancement Mode MOSFET

File Size 753.80K  /  4 Page

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    IRGIB10B60KD1PBF

International Rectifier
Part No. IRGIB10B60KD1PBF
OCR Text ...6 14 ICE = 5.0A ICE = 10A ICE = 20a 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 5.0A ICE = 10A ICE = 20a 12 10 8 6 4 2 0 Fig. 9 - Typical VCE vs. VGE TJ = -40C Fig. 10 - Typical VCE vs. VGE TJ = 25C 20 18 16 14 ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 440.79K  /  12 Page

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    Micross Components
Part No. ICE20N170U
OCR Text ...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 208 w t c = 25...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin...
Description N-Channel Enhancement Mode MOSFET

File Size 755.00K  /  4 Page

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    Micross Components
Part No. ICE20N170FP
OCR Text ...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin...
Description N-Channel Enhancement Mode MOSFET

File Size 1,005.27K  /  4 Page

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