2170 pdf Datasheet P3 Full Text Search --- IC-ON-LINE

2170 Datasheet PDF File

For 2170 Found Datasheets File :: 2032 Search Time::3.266ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
Part No.	MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3
OCR Text	...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W...
Description	RF Power Field Effect Transistors S BAND, Si, N-CHANNEL, RF POWER, MOSFET 2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET
File Size	546.66K / 12 Page	View it Online	Download Datasheet

				ELANTEC[Elantec Semiconductor]
Part No.	EL2270CN EL2270CS EL2170C EL2170CN EL2170CS EL2170CW EL2470CN EL2470CS
OCR Text	...urrent to voltage converters 2170 - 1 EL2170C SOT23-5 EL2470C SO P-DIP January 1996 Rev B Ordering Information Part No Temp Range Package Outline MDP0031 MDP0027 MDP0038 MDP0031 MDP0027 2170 - 46 EL2170CN b 40 C to a 85 ...
Description	70 MHz/1 mA Current Mode Feedback Amplifiers
File Size	317.33K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H360-24SR6
OCR Text	... the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 500 ma, v gsb =0.5vdc,p out = 63 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (d...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	497.43K / 16 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10134
OCR Text	...DD = 28 V IDQ = 1.3 A Total f = 2170 MHz 16 8 0 10 12 14 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.3 A Total, f = 2.17 GHz) Power Output at...
Description	100 Watts, 2.1.2 GHz GOLDMOS Field Effect Transistor 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
File Size	317.17K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210301 PTF210301A PTF210301E
OCR Text	2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features * * Broadband inte...
Description	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
File Size	333.91K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210451 PTF210451E
OCR Text	2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features * * Internal matchi...
Description	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
File Size	402.88K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210901 PTF210901E
OCR Text	2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two-Carrier WCDMA Drive-Up VD...
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
File Size	262.17K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H360-23N A2T21H360-23NR6
OCR Text	....5 2140 mhz 16.8 49.7 7.9 ?31.0 2170 mhz 16.7 49.0 7.9 ?32.8 2200 mhz 16.3 47.2 7.9 ?36.1 features ? advanced high performance in--package doherty ? greater negative gate--source voltage range for improved class c operation ? designed for d...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	476.97K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H141W24SR3
OCR Text	....9 2140 mhz 17.3 50.1 7.1 ?32.2 2170 mhz 17.3 49.6 7.0 ?33.0 2200 mhz 17.2 48.2 7.0 ?34.1 features ? advanced high performance in--package doherty ? designed for wide instantaneous bandwidth applications ? greater negative gate--source volt...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	343.17K / 10 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola, Inc]
Part No.	MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
OCR Text	...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier...
Description	2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
File Size	558.64K / 12 Page	View it Online	Download Datasheet

For 2170 Found Datasheets File :: 2032 Search Time::3.266ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |