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  22mh Datasheet PDF File

For 22mh Found Datasheets File :: 97    Search Time::1.937ms    
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    Advanced Power Technology Ltd.
Part No. APT50M80JLC
OCR Text ...3471 4 Starting T = +25C, L = 2.22mh, R = 25W, Peak I = 52A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, withou...
Description POWER MOS IV 500V 52A 0.080 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.91K  /  2 Page

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    TEW6197 TEW6197-4

Filtran LTD
Part No. TEW6197 TEW6197-4
OCR Text ...4 MT8930A MT8930B MT8931B 1:2 > 22mh < 6.0 H 3.2 6.3 ISSUE: A Turns ratio Inductance Leakage Ind. DC Resistance 97/12/11 Output Impedance Pulse Characteristics Dielectric Strength, (rms) Conforms to the impedance mask speci...
Description ISDN S-Bus Input/Output Transformer

File Size 17.13K  /  1 Page

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    APL502J

Advanced Power Technolo...
Advanced Power Technology
Part No. APL502J
OCR Text ...3471 4 Starting T = +25C, L = 2.22mh, R = 25, Peak I = 52A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 ZJC, THERMAL IMPEDANCE (C/W) 0.20 0.9 0.7 0.15 0....
Description LINEAR MOSFET

File Size 72.01K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT12080JVFR
OCR Text ...471 4 Starting T = +25C, L = 22.22mh, R = 25, Peak I = 15A temperature. j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 5 I I [Cont.], di/ = 100A/s, T 150C, R = 2.0 V = 200V. S D j G R dt APT Reserves the right to change, without...
Description 15 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V

File Size 112.69K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT41H50S APT41H50B
OCR Text .... 2 Starting at TJ = 25C, L = 4.22mh, RG = 4.7, IAS = 21A. 2-2007 Rev A 050-8115 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DS...
Description N-Channel Ultrafast Recovery FREDFET

File Size 253.58K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT42F50S APT42F50B
OCR Text .... 2 Starting at TJ = 25C, L = 4.22mh, RG = 4.7, IAS = 21A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as ...
Description N-Channel FREDFET

File Size 390.97K  /  4 Page

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    ZETEX[Zetex Semiconductors]
Part No. DN71
OCR Text ... number ZXSC400E6 FZT1049 2A 22mh 22mV 350mV 220mF 450mF ZHCS2000 Generic Generic Generic Generic Generic Table 1 Bill of materials Issue 5 - July 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com DN71 Typical op...
Description ZXSC400 Solution for Luxeon V Star high powered LED

File Size 61.43K  /  2 Page

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    Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. DSTINIS400 DSTINIS-005 DSTINIS-006
OCR Text ...le Pad jumper RJ11 modular jack 22mh inductor 205kW, 1% resistor (1206) 121kW, 1% resistor (1206) 49.9W, 1% resistors (1206) 47W resistor (1206) 22.1kW, 1% resistor (1206) 220W resistors (1206) 10kW resistor (1206) Pad jumper DESIGNATION R2...
Description DSTINIs400/DSTINIx-00x插座
Sockets Evaluation Board

File Size 648.14K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQH90N10V2
OCR Text ...m junction temperature 2. L = 0.22mh, IAS = 105A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 105A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temp...
Description 100V N-Channel MOSFET

File Size 961.95K  /  8 Page

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