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IXYS, Corp.
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Part No. |
IXBH6N170
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Description |
High voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 a, 1700 v, N-CHaNNEL igbt, TO-247
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File Size |
175.28K /
5 Page |
View
it Online |
Download Datasheet
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Microsemi, Corp.
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Part No. |
PPHR70L60a
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Description |
Insulated Gate Bipolar Transistor; Package: TO-254; vCE(sat) (v): 1.6; t(on) (nsec): 115; IC (a): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; Bv(CES) (v): 600; vGE(th) (v): 3 70 a, 600 v, N-CHaNNEL igbt
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File Size |
59.58K /
1 Page |
View
it Online |
Download Datasheet
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Price and Availability
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