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  330v Datasheet PDF File

For 330v Found Datasheets File :: 239    Search Time::3.14ms    
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    FQB25N33TM

Fairchild Semiconductor
Part No. FQB25N33TM
OCR Text 330v n-channel mosfet fqb25n33 tm_f 085 330v n-channel mosfet ...
Description 330v N-Channel MOSFET

File Size 1,125.91K  /  7 Page

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    FGPF4533

Fairchild Semiconductor
Part No. FGPF4533
OCR Text 330v, pdp trench igbt august 2010 absolute maximum ratings symbol description ratings units v ces collector to emitter voltage 330 v v ges gate to emitter voltage 30 v i c pulse(1)* collector current @ t c = 25 o c 200 a p d maximu...
Description 330v, PDP IGBT

File Size 249.12K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. ISL5571A04 ISL5571AIBZ ISL5571A ISL5571AIB
OCR Text ....5 Max) and a blocking voltage >330v. The Ring Return MOSFET has a typical Ron of 50 and a blocking voltage >330v. The Ringing Access switch is implemented with a SCR device with a blocking voltage >480V. The SCR switch inherently offers lo...
Description High Voltage Switch, Subscriber Line Access, 0.5Ω Max Ron Match, 28Ω Max Ron
Access High Voltage Switch

File Size 178.46K  /  12 Page

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    Intersil, Corp.
Part No. ISL5571AIBZ
OCR Text ... max) and a blocking voltage >330v. the ring return mosfet has a typical ron of 50 ? and a blocking voltage >330v. the ringing access switch is impl emented with a scr device with a blocking voltage >480v. the scr switch inherently o...
Description Access High Voltage Switch SPECIALTY TELECOM CIRCUIT, PDSO16

File Size 180.87K  /  12 Page

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    IRG6I330UPBF

International Rectifier
Part No. IRG6I330UPBF
OCR Text ...- 100 --- --- --- mV/C VCE = 330v, VGE = 0V 20 VCE = 330v, VGE = 0V, TJ = 100C --- A VCE = 330v, VGE = 0V, TJ = 125C 200 VCE = 330v, VGE = 0V, TJ = 150C --- 100 -100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ns J ns nA S nC...
Description PDP TRENCH IGBT

File Size 304.61K  /  7 Page

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    CLARE[Clare, Inc.]
Clare Inc.
Clare Inc
Part No. CPC7583BA CPC7583BATR CPC7583BBTR CPC7583 CPC7583BC CPC7583BCTR CPC7583BD CPC7583BDTR CPC7583BB
OCR Text ...260V +85oC Vsw (differential)= -330v to Gnd Vsw (differential)= -60V to +270V -40oC Vsw (differential)= -310V to Gnd Vsw (differential)= -60V to +250V RDSON (SW1,SW2): +25oC TLINE= +/-10 mA, +/-40mA, TBAT= -2V +85oC TLINE= +/-10 mA, +/-40mA...
Description Line Card Access Switch

File Size 190.93K  /  16 Page

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    FGA90N33ATD11 FGA90N33ATDTU

Fairchild Semiconductor
Part No. FGA90N33ATD11 FGA90N33ATDTU
OCR Text 330v, 90a pdp trench igbt august 2011 absolute maximum ratings symbol description ratings units v ces collector to emitter voltage 330 v v ges gate to emitter voltage 30 v i c collector current @ t c = 25 o c 90 a i c pulse(1) pulse...
Description 330v, 90A PDP Trench IGBT

File Size 397.68K  /  9 Page

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    IRG6S330UPBF

International Rectifier
Part No. IRG6S330UPBF
OCR Text ...- 100 --- --- --- mV/C VCE = 330v, VGE = 0V 20 VCE = 330v, VGE = 0V, TJ = 100C --- A VCE = 330v, VGE = 0V, TJ = 125C 200 VCE = 330v, VGE = 0V, TJ = 150C --- 100 -100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ns J ns nA S nC...
Description PDP TRENCH IGBT

File Size 230.27K  /  8 Page

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    ADPOW[Advanced Power Technology]
Part No. APT5010LLL APT5010B2LL APT5010B2LL_04 APT5010B2LL04 MICROSEMIPOWERPRODUCTSGROUP-APT5010B2LL
OCR Text ...RWARD VOLTAGE 100 V DD G = 330v td(off) 90 80 R = 5 T = 125C J L = 100H tr and tf (ns) 50 40 30 20 10 DD G = 330v 70 60 50 40 30 td(on) 20 10 tf tr R = 5 T = 125C J L = 100H 0 10 40 ...
Description POWER MOS 7 MOSFET

File Size 169.53K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT5010LFLL APT5010B2FLL APT5010B2FLL_04 APT5010B2FLL04
OCR Text ...RWARD VOLTAGE 100 V DD G = 330v td(off) 90 80 R = 5 T = 125C J L = 100H tr and tf (ns) 50 40 30 20 10 DD G = 330v 70 60 50 40 30 td(on) 20 10 tf tr R = 5 T = 125C J L = 100H 0 10 40 ...
Description POWER MOS 7 FREDFET

File Size 170.27K  /  5 Page

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