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  5.08 08 180 Datasheet PDF File

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ...-- --- --- Typ. --- 0.084 10.5 --- --- --- --- --- --- 89 21 30 12 80 55 49 4.5 7.5 3270 520 78 3500 340 640 Max. Units Conditions ---...08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 146.42K  /  9 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ... 110 80 390 200 1.3 20 62 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resist...08 (.200 ) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1 .39 (.055...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...84 3.8 94 0.63 20 350 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter ...08 (.200 ) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1 .39 (.055...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...0 150 3.8 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 152.65K  /  10 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ...A 0.045 VGS = 10V, ID = 25A 4.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100...08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 ...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...C Reference to 25C, ID = 1mA 12.5 VGS = 10V, ID = 15A m 17 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VD...08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 50 100 150 200 250 ID , Drain Current ( A ) VGS = 10V V...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...430 82 See Fig.12a, 12b, 15, 16 5.5 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter ...08/02 IRF3808S/IRF3808L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...IT 3 80 11 10 0.05 6 36 18 12 3.5 4.5 7.5 633 103 61 4 6 110 275 100 10 250 40 5.6 19 V V V V V m m S nA A A nC nC nC ns ns ns ns nH nH nH p...08 0.06 0.04 0.02 Drain-Source On Resistance, RDS(on) (Ohms) 4.8V 4.6V 5V 5.2 V 5.4 V 6V Tj = 25 ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...7 3.8 48 0.32 20 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...08 (.20 0) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    M74HCT165 M74HCT165B1R M74HCT165C1R M74HCT165M1R M54HCT165F1R 2110 M54HCT165

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M74HCT165 M74HCT165B1R M74HCT165C1R M74HCT165M1R M54HCT165F1R 2110 M54HCT165
OCR Text ...EED tPD = 17 ns (TYP.) AT VCC = 5 V SSIPATION ICC = 4 A (MAX.) AT TA = 25 C VE CAPABILITY 10 LSTTL LOADS ON DELAYS tPLH = tPHL CAL OUTPUT IM...08 0.307 0.090 0.016 0.046 0.009 0.020 3.3 0.015 0.700 0.110 0.022 0.060 0.012 0.050 0.406 0.317 0.2...
Description From old datasheet system
8 BIT PISO SHIFT REGISTER

File Size 276.18K  /  13 Page

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