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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
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| Part No. |
STTA812G-TR STTA812D STTA812DI STTA812G
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| OCR Text |
...RRM trr (typ) VF (max) 8A 1200V 50ns
A
A K
K
2.0V
K
TO-220AC STTA812D FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PU... |
| Description |
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Dark Blue; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1015, CSA Type TEW, JQA-F-, Passes VW-1 Flame Test; Conductor Material:Copper RoHS Compliant: Yes
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
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| File Size |
90.06K /
10 Page |
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LRC[Leshan Radio Company]
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| Part No. |
L1SS226LT1G L1SS226LT1
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| OCR Text |
...R IN=50 ) E
IF=10mA 0
IR
50ns PULSE GENERATOR (R OUT=50 )
0.1I R
trr
Fig.5 Reverse recovery time (trr ) test circuit
L1SS226LT1 -2/3
LESHAN RADIO COMPANY, LTD.
L1SS226LT1
SOT-23
NOTES:
1. DIMENSIONING AND TOL... |
| Description |
Ultra High Speed Switching Application
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| File Size |
73.36K /
3 Page |
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it Online |
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LRC[Leshan Radio Company]
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| Part No. |
L1SS184LT1G L1SS184LT1
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| OCR Text |
...R IN=50 ) E
IF=10mA 0
IR
50ns PULSE GENERATOR (R OUT=50 )
0.1IR
trr
Fig.5 Reverse recovery time (trr) test circuit
L1SS184LT1 -2/3
LESHAN RADIO COMPANY, LTD.
L1SS184LT1
SOT-23
NOTES:
A L 3 1 V G 2 BS DIM MIN ... |
| Description |
Ultra High Speed Switching Application
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| File Size |
69.25K /
3 Page |
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it Online |
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Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
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| Part No. |
L1SS181LT1
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| OCR Text |
...R IN=50 ) E
IF=10mA 0
IR
50ns PULSE GENERATOR (R OUT=50 )
0.1I R
trr
Fig.5 Reverse recovery time (trr) test circuit
L1SS181LT1 -2/3
LESHAN RADIO COMPANY, LTD.
L1SS181LT1
SOT-23
NOTES:
A L 3 1 V G 2 BS DIM MIN... |
| Description |
Ultra High Speed Switching Application 超高速开关应
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| File Size |
68.79K /
3 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
HFA135NH40
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| OCR Text |
...C IRRM(typ.) = 7.5A trr(typ.) = 50ns di(rec)M/dt (typ.)= 270A/s
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior f... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
218.75K /
5 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
80EBU04
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| OCR Text |
... * Reduced Parts Count
trr = 50ns (typ) IF(AV) = 80Amp VR = 400V
Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates ... |
| Description |
400V 80A Ultra-Fast Discrete Diode in a PowIRtab package
Ultrafast Soft Recovery Diode
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| File Size |
146.00K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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