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Mosel Vitelic, Corp.
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| Part No. |
V826664G24SXSG-A1
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| OCR Text |
...to- refresh time (=t rc ) 70ns 65ns 65ns 60ns 60ns 60ns 60ns 46h 41h 41h 3ch 3ch 3ch 3ch 42 sdram device minimum active to autorefresh to active/auto-refresh time (=t rfc ) 80ns 75ns 75ns 72ns 70ns 70ns 70ns 50h 4bh 4bh 48h 46h 46h 46h ... |
| Description |
64M X 64 DDR DRAM MODULE, 0.8 ns, DMA200 SODIMM-200
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| File Size |
152.54K /
15 Page |
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SPANSION[SPANSION]
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| Part No. |
S71PL129JC0_06 S71PL129JA0 S71PL129JB0 S71PL129JC0
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| OCR Text |
...to 3.1 volt High performance -- 65ns (65ns Flash, 70ns pSRAM) Package -- 8 x 11.6 x 1.2 mm 64 ball FBGA Operating Temperature -- -25C to +85C (Wireless) -- -40C to +85C (Industrial)
Dual CE# Flash memory
General Description
The S71PL... |
| Description |
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory
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| File Size |
1,445.92K /
153 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
RURG5060 RURG5060NL
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| OCR Text |
...recovery characteristics (trr < 65ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a var... |
| Description |
75A, 600V UltraFast Diode
50A, 600V Ultrafast Diode
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| File Size |
325.27K /
4 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
RHRG30120
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| OCR Text |
...recovery characteristics (trr < 65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and ... |
| Description |
30A/ 1200V Hyperfast Diode
30A, 1200V Hyperfast Diode
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| File Size |
56.23K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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