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				SUMIDA CORP
Part No.	CDRH4D28CLD-3R3PC CDRH4D28CLD-2R2PC
OCR Text	...3 1.5 4.5 6.9 m ax. 3.0 max. (2.8) electrode terminal 4.9 0.2 3.0 max. 4.9 0.2 1 . 4 0 . 2 4 . 4 0 . 3 6 . 2 m a x . power induct...4m) 2.20 cdrh4d28np-2r2n 2r2 2.2 30% 31.3m(23.2m) 2.04 cdrh4d28np-2r7n 2r7 2.7 30% 43.3m...
Description	1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 2.2 uH, GENERAL PURPOSE INDUCTOR, SMD
File Size	157.91K / 3 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LE28F4001C LE28F4001CTS LE28F4001CTS-12
OCR Text	8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per secto...4m-Bit Flash EEPROM Preliminary Specifications A11 A9 A8 A13 A14 A17 WE Vcc A18 A16 A15 A12 A7 A...
Description	4m-Bit (512k 8) Flash EEPROM 4m-Bit (512k 】 8) Flash EEPROM 4m-Bit (512k 8) Flash EEPROM 4m-Bit (512k × 8) Flash EEPROM
File Size	167.02K / 15 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K8D6316UBM
OCR Text	...a program operation in units of 8 bits (byte) or 16 bits (word) and erases in units of a block. single or multiple blocks can be erased. the block erase operation is completed within typically 0.7 sec. the device requires 15ma as program/e...
Description	(K8D6x16UxM) 64m Bit (8M x8/4m x16) Dual Bank NOR Flash Memory
File Size	671.96K / 48 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M5M4V4S40CTP-12 M5M4V4S40CTP-15 4mX16SDRAMTP
OCR Text	...ATION (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32...4m (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM BLOCK DIAGRAM DQ0-15 I/O Buffer Memo...
Description	4m (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM From old datasheet system
File Size	1,456.01K / 45 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4S560432J
OCR Text	..... ................ ......... 7 8.0 absolute maximum ratings.......... ................. ................ .............. .............. ......4m x 16 bit x 4 banks sdram row & column address configuration organization row address column addr...
Description	256Mb J-die SDRAM Specification
File Size	320.51K / 15 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	ISL54215 ISL54215IRUZ-T
OCR Text	...3 4 d- com - l in ctrl 2 10 5 7 8 d+ com + r gnd 9 6 vdd logic control 4m 4m truth table isl54215 in ctrl l, r d+, d- 00offoff 0 1 on off 1xoffon in, ctrl: logic ?0? when 0.5v or floating, logic ?1? when 1.4v with 2.7v to 3.6v supp...
Description	MP3/USB 2.0 High Speed Switch with Negative Signal Handling and Low Power Shutdown
File Size	648.62K / 15 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	ISL54213 ISL54213IRTZ ISL54213IRTZ-T ISL54213IRUZ-T
OCR Text	...3 4 d- com - l in ctrl 2 10 5 7 8 d+ com + r gnd 9 6 vdd logic control 4m 50k 50k 4m 2 4 5 d- com - l in 3 7 8 d+ com + r 9 6 vdd 1 gnd 10 ctrl logic control 50k 50k 4m 4m truth table isl54213 in ctrl l, r d+, d- 00offoff 0 1 on off...
Description	MP3/USB 2.0 High Speed Switch with Negative Signal Handling and Mute Function
File Size	774.20K / 15 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS8180S18
OCR Text	... i/o sigma s dr sram 333 mhz 1.8 v v dd 1.8 v and 1.5 v i/ 209-bump bga commercial temp industrial temp s ram features ? observes the sigm...4m) da4 da3 w qd1 qd2 tms tdi a mcl a tdo tck da2 da1 rev 10 11 x 19 bump bga?14 x 22 mm2 body?1 mm ...
Description	1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位独立I/O接口双数据速率读和写模式静态ΣRAM) 1x 18位独立的I / O西格玛的DDR SRAM的（100万18位独立的I / O接口双数据速率读和写模式静态ΣRAM
File Size	859.07K / 32 Page	View it Online	Download Datasheet

For 8 4m Found Datasheets File :: 5276 Search Time::2.11ms
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