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800-960 Datasheet PDF File

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				Panasonic Semiconductor
Part No.	AN6175K
OCR Text	...ower Dissipation PD Ta (mW) 1,800 1,600 Power Dissipation (PD) 1,400 1,200 1016 1,000 800 600 400 200 0 0 25 50 75 Open condition Rthj-- a=123C/W PD=1016mW(25C) 100 125 Ambient Temperature (Ta) 150 (C) 6 ICs for...
Description	Hands-free Speech Network IC
File Size	208.57K / 21 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text	... Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Rev - Gate Drain Source Heat Sink (Drain) and Leads are Plated 2.21 (.087) 2.59 (.102) 050-7131 5.45 (.215) BSC 2-Pl...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5028BVR
OCR Text	... (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-5615 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of t...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 20A 0.280 Ohm
File Size	61.82K / 4 Page	View it Online	Download Datasheet

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