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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML101J23
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| OCR Text |
...ular) Test conditions CW CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw Min. 654 7 14 Typ. 65 150 2.4 0.95 658 9.5 17 Max 3.0 662 12 20 Unit mA mA V mW/mA nm As of Nov. `04
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MITSUBISHI ELECTRIC
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| Description |
MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
71.02K /
3 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML101J25 ML101J24
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| OCR Text |
...ular) Test conditions CW CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw Min. 654 7 14 Typ. 65 150 2.4 0.95 658 9.5 17 Max 3.0 662 12 20 Unit mA mA V mW/mA nm As of Nov. `04
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MITSUBISHI ELECTRIC
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| Description |
MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
26.97K /
3 Page |
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Mitsubishi Electric
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| Part No. |
ML101J22 ML120G22
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| OCR Text |
...ular) Test conditions CW CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw Min. 654 7 14 Typ. 65 150 2.4 0.95 658 9.5 17 Max 3.0 662 12 20 Unit mA mA V mW/mA nm As of Feb. `04
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MITSUBISHI ELECTRIC
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| Description |
(ML1xx22) FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
111.76K /
2 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML101J26
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| OCR Text |
...ular) Test conditions CW CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw Min. 654 7 14 Typ. 65 150 2.4 0.95 658 9.5 17 Max 3.0 662 12 20 Unit mA mA V mW/mA nm As of Aug. `06
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MITSUBISHI ELECTRIC
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| Description |
MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
23.75K /
3 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML1XX21 ML101J21
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| OCR Text |
...ular) Test conditions CW CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw Min. 654 7 14 Typ. 65 150 2.4 0.95 658 9.5 17 Max 3.0 662 12 20 Unit mA mA V mW/mA nm As of Nov. `04
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MITSUBISHI ELECTRIC
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| Description |
MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
69.83K /
3 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML1XX22 ML101J22 ML120G22
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| OCR Text |
...ular) Test conditions CW CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw CW, Po=80mw Min. 654 7 14 Typ. 65 150 2.4 0.95 658 9.5 17 Max 3.0 662 12 20 Unit mA mA V mW/mA nm As of Feb. `04
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MITSUBISHI ELECTRIC
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| Description |
FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
85.53K /
2 Page |
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ROHM[Rohm]
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| Part No. |
RLD2WMGS1
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| OCR Text |
...3 3 80 665 6 Unit mA mA V CW PO=80mw CW PO=80mw CW Conditions
Under development
mW/mA 30mW/ (I (80mw)- I (50mW)) deg deg deg deg deg nm nm PO=80mw CW NA=0.45, PO=5mW CW - PO=80mw CW
// X,Y,Z As
CD Parameter Threshold curren... |
| Description |
660nm High Power / 780nm Low Power Dual Wave Laser
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| File Size |
72.61K /
4 Page |
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it Online |
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