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  bgo Datasheet PDF File

For bgo Found Datasheets File :: 145    Search Time::1.891ms    
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    M5M29GT320WG M5M29GB320WG

Renesas Electronics Corporation
Part No. M5M29GT320WG M5M29GB320WG
OCR Text ...Flash Memories with alternating bgo (Back Ground Operation) feature. The bgo feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the ...
Description 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

File Size 86.05K  /  3 Page

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    M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331AVP M5M29KT331AVP

Renesas Electronics Corporation.
Part No. M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331AVP M5M29KT331AVP
OCR Text ...FLASH Memories with alternating bgo(Back Ground Operation) feature. The bgo feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the o...
Description Memory>NOR type Flash Memory
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

File Size 258.58K  /  32 Page

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    M5M29KE131BVP

Renesas Electronics Corporation
Part No. M5M29KE131BVP
OCR Text ...block Flash Memory. Alternating bgo(Back Ground Operation) feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank in each...
Description Memory>NOR type Flash Memory
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)

File Size 308.60K  /  33 Page

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    M6MGB166S2BWG M6MGT166S2BWG

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. M6MGB166S2BWG M6MGT166S2BWG
OCR Text ...Flash Memories with alternating bgo (Back Ground Operation) feature. The bgo feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the ...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

File Size 248.67K  /  30 Page

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    M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008

Mitsubishi Electric Semiconductor
Part No. M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008
OCR Text ...Flash Memories with alternating bgo (Back Ground Operation) feature. The bgo feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the ...
Description From old datasheet system
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

File Size 255.30K  /  30 Page

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    Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
Part No. R1450
OCR Text ... PHR = 18.50 (%) SCINTILLATOR = bgo 1"Dia x 1" THICKNESS SOURCE = Na-22 (511 keV) PEAK CHANNEL = 514.4 (ch) 20 (mV/div.) 500 SUPPLY VOLTAGE: -1500 (V) RISE TIME: 1.775 (ns) FALL TIME: 6.984 (ns) LOAD RESISTANCE: 50 0 100 ...
Description PHOTOMULTIPLIER TUBE

File Size 94.81K  /  4 Page

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    N.A.
Part No. M6MGB166S4BWG
OCR Text ...Flash Memories with alternating bgo (Back Ground Operation) feature. The bgo feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the ...
Description 3.3V-ONLY FLASH MEMORY

File Size 255.61K  /  31 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M6MGT160S2BVP M6MGB160S2BVP
OCR Text ...Flash Memories with alternating bgo (Back Ground Operation) feature. The bgo feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the ...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

File Size 253.82K  /  30 Page

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