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bv-ceo Datasheet PDF File

For bv-ceo Found Datasheets File :: 4341 Search Time::2.718ms
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				Advanced Semiconductor
Part No.	ASI10595
OCR Text	...595 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE Cob GP IMD3 IC = 50 mA IC = 50 mA IC = 50 mA IE = 5.0 mA VCE = 15 V VCE = 5.0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 5 UNITS V...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	16.66K / 1 Page	View it Online	Download Datasheet

				Advanced Semiconductor
Part No.	ASI10596
OCR Text	...596 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE COB GP C IC = 50 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 3.5 10 UNITS V V...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	17.23K / 1 Page	View it Online	Download Datasheet

				ASI[Advanced Semiconductor]
Part No.	ASI10597 HF50-12S ALR325 ASI10516 ASI10531 ASI2223-4
OCR Text	...597 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE COB GP C IC = 50 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 3.5 10 UNITS V V...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	16.65K / 1 Page	View it Online	Download Datasheet

				Advanced Semiconductor, Inc.
Part No.	ASI10599 HF100-12
OCR Text	...599 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE COB GP IMD3 IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5.0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 20 UNITS...
Description	NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V))
File Size	16.09K / 1 Page	View it Online	Download Datasheet

				Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
Part No.	ASI10600 HF8-28F ASI1020 ASI10526 ASI10540 ASI10586 CBSL150
OCR Text	...600 CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO BV EBO ICBO hFE COB GP POUT IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35...
Description	14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
File Size	17.29K / 1 Page	View it Online	Download Datasheet

				Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
Part No.	ASI10602 HF15-28F ASI10639
OCR Text	...602 CHARACTERISTICS SYMBOL BV CEO BV CES BV EBO ICBO hFE COB GP fT IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V VCE = 10 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35 65 4.0 2....
Description	14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
File Size	17.09K / 1 Page	View it Online	Download Datasheet

				ASI[Advanced Semiconductor] Advanced Semiconductor, Inc.
Part No.	ASI10604 HF30-28F
OCR Text	...604 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES ICBO hFE COB GP C IC = 10 mA IC = 200 mA IC = 200 mA IE = 10 mA VCE = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL...
Description	NPN SILICON RF POWER TRANSISTOR 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
File Size	17.30K / 1 Page	View it Online	Download Datasheet

				ASI[Advanced Semiconductor] Advanced Semiconductor, Inc.
Part No.	ASI10605 HF30-28S
OCR Text	...605 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES ICBO hFE COB GP C IC = 10 mA IC = 200 mA IC = 200 mA IE = 10 mA VCE = 30 V VCE = 30 V VCE = 5.0 V VCB = 30V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65...
Description	NPN SILICON RF POWER TRANSISTOR 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator HF BAND, Si, NPN, RF POWER TRANSISTOR
File Size	16.86K / 1 Page	View it Online	Download Datasheet

				ASI[Advanced Semiconductor]
Part No.	ASI10606 HF75-28F
OCR Text	...606 CHARACTERISTICS SYMBOL BV CEO BV CER BV EBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 25 V TC = 25 OC NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 ...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	17.21K / 1 Page	View it Online	Download Datasheet

				ADVANCED SEMICONDUCTOR INC Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
Part No.	ASI10607 HF75-28S
OCR Text	...607 CHARACTERISTICS SYMBOL BV CEO BV CER BV EBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 25 V TC = 25 OC NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 ...
Description	14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator HF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
File Size	16.62K / 1 Page	View it Online	Download Datasheet

For bv-ceo Found Datasheets File :: 4341 Search Time::2.718ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |