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Renesas Electronics Corporation
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Part No. |
HAT2210R-EL-E
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OCR Text |
...1shot pulse dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 125 c/w, ta = 25 c when using the glass epoxy board (fr4 40x40x...tc = 75 c 25 c ? 25 c channel dissipation pch (w) ambient temperature ta ( c) power vs.... |
Description |
Silicon N Channel Power MOSFET with Schottky Barrier Diode
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File Size |
184.32K /
12 Page |
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it Online |
Download Datasheet
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Renesas Electronics Corporation
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Part No. |
HAT2201R-16
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OCR Text |
...l to ambient thermal impedance ch-a note3 50 c/w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes: 1. pw 10 ...tc = 75c 25c ?25c v ds = 10 v pulse test gate to source voltage v gs (v) drain to source volt... |
Description |
Silicon N Channel Power MOS FET Power Switching
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File Size |
216.28K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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