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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH216 Q62702-P936
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| OCR Text |
...e surface Halbwinkel Half angle dunkelstrom, VR = 20 V Dark current
A LxB LxW H
1 1x1
mm2 mm
4.2 ... 5.0
mm
12 1 ( 5)
Grad deg. nA
IR
Semiconductor Group
411
SFH 216
Kennwerte (TA = 25 C, Normlicht A... |
| Description |
From old datasheet system
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time
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| File Size |
200.97K /
4 Page |
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Infineon
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| Part No. |
SFH2400FA SFH2400
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| OCR Text |
...cont'd) Bezeichnung Description dunkelstrom, VR = 20 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standar... |
| Description |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit
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| File Size |
35.67K /
4 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
SFH2545FA SFH2545 SFH2540FA SFH2540 Q62702-P1795
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| OCR Text |
... SFH 2545 Halbwinkel Half angle dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standar... |
| Description |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time
From old datasheet system
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| File Size |
169.06K /
4 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SFH2500FA SFH2500 SFH2505FA SFH2505
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| OCR Text |
...tive area Halbwinkel Half angle dunkelstrom, VR = 20 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standar... |
| Description |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit
Silicon PIN Photodiode with Very Short Switching Time
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| File Size |
55.30K /
5 Page |
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it Online |
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Infineon
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| Part No. |
SFH3201
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| OCR Text |
...V, f = 1 MHz, E = 0 Capacitance dunkelstrom Dark current VCE = 20 V, E = 0 Symbol Symbol S max Wert Value 850 Einheit Unit nm
460 ... 1080 nm
A LxB LxW CCE ICEO
0.55 1x1 60 15 3 ( 200)
mm2 mm x mm Grad deg. pF nA
Semicondu... |
| Description |
NPN-Silizium-Fototransistor im SMT-Gehuse Silicon NPN Phototransistor in SMT Package
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| File Size |
104.32K /
5 Page |
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it Online |
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Infineon
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| Part No. |
SFH3500FA SFH3500 SFH3505FA SFH3505
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| OCR Text |
...V, f = 1 MHz, E = 0 Capacitance dunkelstrom, VCE = 20 V Dark current Symbol Symbol SFH 350x S max 830 450 ... 1060 Wert Value SFH 350x FA 860 740 ... 1070 nm nm Einheit Unit Symbol Symbol Wert Value 100 7 150 400 Einheit Unit mA V mW K/W
... |
| Description |
NPN Silizium Fototransistor Silicon NPN Phototransistor
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| File Size |
54.62K /
5 Page |
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it Online |
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Infineon
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| Part No. |
BP104FS
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| OCR Text |
...e surface Halbwinkel Half angle dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Symbol Symbol S Wert Value 34 ( 25) Einheit Unit A
S max
950 800 ... 1100
nm nm
... |
| Description |
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight Filter
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| File Size |
29.87K /
4 Page |
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it Online |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
SFH221S SFH221 Q62702-P270
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| OCR Text |
...e diode Bezeichnung Description dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Maximale Abweichung der Fotoempfindlichkeit vom Mittelwert Max. deviation of the system spectral sensitivity f... |
| Description |
Silizium-Differential-Fotodiode Silicon Differential Photodiode
From old datasheet system
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| File Size |
221.21K /
4 Page |
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it Online |
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