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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S18060MBR1 MRD6S18060MR1
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| OCR Text |
... - 2000 MHz, 60 W, 26 V GSM/GSM edge LATERAL N - CHANNEL RF POWER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GS...tdma, CDMA, and multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
676.45K /
20 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D
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| OCR Text |
...s designed for CDMA and GSM/GSM edge applications. It uses Motorola's newest high voltage (26 to 28 Volts) LDMOS IC technology and integrate...tdma, and CDMA. The device is packaged in a PFP-16 flat pack package that provides excellent thermal... |
| Description |
MHVIC915R2 CDMA, GSM/GSM edge, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
648.85K /
12 Page |
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it Online |
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Freescale Semiconductor
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| Part No. |
MRF6S18060MR1
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| OCR Text |
...osfets designed for gsm and gsm edge base station applications with frequencies from 1800 to 2000 mhz. suitable for tdma, cdma, and multicarrier amplifier applications. gsm application ? typical gsm performance: v dd = 26 vdc, i dq = 600 ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
727.69K /
20 Page |
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it Online |
Download Datasheet |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1
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| OCR Text |
...cellular applications: GSM, GSM edge, tdma, CDMA and W - CDMA. Final Application Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain -- 29 dB IMD --... |
| Description |
GSM/GSM edge, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM edge, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
579.33K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S18100NBR1
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| OCR Text |
...osfets designed for gsm and gsm edge base station applications with frequencies from 1800 to 2000 mhz. suitable for tdma, cdma and multicarrier amplifier applications. gsm application ? typical gsm performance: v dd = 28 volts, i dq =... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
703.35K /
20 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW6IC2015NBR1 MW6IC2015GNBR1
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| OCR Text |
...cellular applications: GSM, GSM edge, PHS, tdma, CDMA, W - CDMA and TD - SCDMA. Final Application * Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 Watts PEP, Full Frequency Band (1805 - 1880 MHz or 1... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
1,114.00K /
28 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
HSP50216_06 HSP50216 HSP50216KI HSP50216KIZ
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| OCR Text |
...e HSP50216 occurs on the rising edge of CLK. Synchronization Input Signal. Used to align the processing with an external event or with other HSP50216 devices. SYNCI can update the carrier NCO, reset decimation counters, restart the filter c... |
| Description |
Four-Channel Programmable Digital DownConverter
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| File Size |
750.81K /
58 Page |
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it Online |
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NEC, Corp.
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| Part No. |
UPC2708T-E3
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| OCR Text |
...to the dac. data on the rising edge of pdm_clk is considered left-channel data while data on the falling pdm_clk edge is right channel. ...tdma noise from gsm radios s extensive click-and-pop reduction circuitry s robust short-circuit ... |
| Description |
RF Amplifier REORD 551-UPC2708TB SO-6 WB AMP MMIC
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| File Size |
2,943.09K /
22 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF18090BSR3
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| OCR Text |
...l mosfets designed for gsm and edge base station applications with frequencies from 1.9 to 2.0 ghz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for gsm and edge cellular radio applications.... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
385.00K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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