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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...y for extremely low RDS(ON) and fast switching High power and current handling capability Applications * DC/DC converter * Motor drives ...Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 11.5A, di...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    HBAT54C HBAT54S HBAT54A HBAT54

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelect...
Part No. HBAT54C HBAT54S HBAT54A HBAT54
OCR Text ...re very low turn-on voltage and fast switching. There is a PN junction guard ring against excessive voltage such as electronics attic discha...Recovery Time HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification HI-SINCERITY MI...
Description Silicon Schottky Barrier Double Diodes

File Size 22.64K  /  3 Page

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    HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM6264BLFP-8LT HM6264BLP-10L HM6264BLP-8L HM6264BLSP-10L HM6264BLSP-8L HM62

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM6264BLFP-8LT HM6264BLP-10L HM6264BLP-8L HM6264BLSP-10L HM6264BLSP-8L HM6264BLP-XXL HM6264BLSP-XXL HM6264BLFP-XXLT
OCR Text ...ting. Features * High speed Fast access time: 85/100 ns (max) * Low power Standby: 10 W (typ) Operation: 15 mW (typ) (f = 1 MHz) * Singl...recovery time WE to output in high-Z Data to write time overlap Data hold from write time Output act...
Description Low Power SRAMs
IC,SRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
64 k SRAM (8-kword x 8-bit)
Data Selectors/Multiplexers 20-LCCC -55 to 125

File Size 74.92K  /  15 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...0EL) 175C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET(R) Power MOSFET D VDSS = 60V RDS(on) = 12m Descript...Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...ting 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 12m G S ID = 84A Description Adv...Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text Fast Switching l Fully Avalanche Rated Description l l HEXFET(R) Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11m G S...Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...ting 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11m G S ID = 85A Description Adv...Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...ance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 7.5m S Description S...Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...ting 175C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 40V G S RDS(on) = 0.009 ID = 100A Description Fifth G...Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...ting 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 20V RDS(on) = 4.0m S ID = 174A D...Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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