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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA07H0608M RA07H0608M-E01 RA07H0608M-01
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OCR Text |
...MHz * Low-Power Control Current igg=1mA (typ) at VGG=5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
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Description |
PTSE 12C 4#16,8#20 PIN PLUG 三菱射频MOSFET模块 PTSE 19C 19#20 SKT PLUG 三菱射频MOSFET模块 68 MHz - 88 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 30 X 10 MM, 5.40 MM HEIGHT, H46S, 4 PIN MITSUBISHI RF MOSFET MODULE
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File Size |
63.46K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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