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integer-n Datasheet PDF File

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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address chang...N) AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK...
Description	IC REG ULDO DUAL 2.8/1.5V 6-MLF 8Mx16 SDRAM 54CSP 2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
File Size	66.22K / 10 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L K4S560832A-TC/L75
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. For -80/1H/1L, tRDL...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
File Size	125.57K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S560832B-TC_L75 K4S560832B-TC/L75 K4S560832B-TC/L1L K4S560832B-TC/L1H
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. For 1H/1L, tRDL=1CL...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	130.10K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. In 100MHz and below...
Description	32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.63K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. In 100MHz and below...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	116.54K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. Rev.0.1 Oct.1999 ...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. For -80/1H/1L/10, t...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PMB2100
OCR Text	...cp, fractional: 1.2 mA 20% Icp, integer: 2.0 mA 20% The SAM timer is set to 115us. VCO PMB2100 Appl_circuit.wmf Figure 3-1 Application Circuit Locking times of less than 200us for 10 peak phase error, more than -50dB of loop ...
Description	GSM LO1 VCO
File Size	472.02K / 20 Page	View it Online	Download Datasheet

For integer-n Found Datasheets File :: 2211 Search Time::2.531ms
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