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Motorola Mobility Holdings, Inc. MOTOROLA INC
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Part No. |
MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N100EW MTP3N100EA16A MTP3N100EAJ MTP8N20AJ MTP8N20A16A MTP8N20N MTP8N20D1 IRF640N MTP6N60EA16A MTP6N60E16 MTP6N60EAJ MTP6N60ED1 MTP33N10E16 MTP33N10EAJ MTP6P20ED1 MTP6P20ET MTP6P20E16 MOTOROLAINC-IRF64016 MTP4N80E16 MTP4N80EA16A MTP15N05ET MTP3055E16 MTP15N06EA16A MTP15N06EAJ MTP15N06EU2 MTP15N06EW MTP50N05EAF MTP50N05EAJ MTP20N0616 MTP20N06N MTP15N05EC MTP8N20AF
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Description |
6 A, 600 V, 1.2 ohm, n-channel, Si, power, mosfeT, TO-220AB 6 A, 200 V, 1 ohm, P-CHANNEL, Si, power, mosfeT, TO-220AB 3 A, 1000 V, 4 ohm, n-channel, Si, power, mosfeT, TO-220AB 8 A, 200 V, 0.4 ohm, n-channel, Si, power, mosfeT, TO-220AB 18 A, 200 V, 0.18 ohm, n-channel, Si, power, mosfeT, TO-220AB 33 A, 100 V, 0.058 ohm, n-channel, Si, power, mosfeT, TO-220AB 4 A, 800 V, 3 ohm, n-channel, Si, power, mosfeT, TO-220AB 15 A, 50 V, 0.1 ohm, n-channel, Si, power, mosfeT, TO-220AB 12 A, 60 V, 0.15 ohm, n-channel, Si, power, mosfeT, TO-220AB 15 A, 60 V, 0.12 ohm, n-channel, Si, power, mosfeT, TO-220AB 50 A, 50 V, 0.028 ohm, n-channel, Si, power, mosfeT, TO-220AB 20 A, 60 V, 0.085 ohm, n-channel, Si, power, mosfeT, TO-220AB
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File Size |
66.30K /
2 Page |
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Renesas Electronics Corporation
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Part No. |
NE55410GR-T3-AZ
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Description |
2 CHANNEL, S BAND, Si, n-channel, RF power, mosfeT n-channel SILICON power LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END power AMPLIFIER
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File Size |
307.65K /
15 Page |
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Microsemi, Corp. ADPOW[Advanced power Technology]
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Part No. |
APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT10078BFLLG APT10078SFLL APT10078SFLLG
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Description |
14 A, 1000 V, 0.78 ohm, n-channel, Si, power, mosfeT D3PAK-3 14 A, 1000 V, 0.78 ohm, n-channel, Si, power, mosfeT, TO-247AD TO-247, 3 PIN power MOS 7TM is a new generation of low loss, high voltage, n-channel enhancement mode power mosfeTS.
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File Size |
196.31K /
5 Page |
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Microsemi, Corp. ADPOW[Advanced power Technology]
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Part No. |
APT10078SLL APT10078BLL APT10078BLL_04 APT10078BLL04 APT10078BLLG
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Description |
14 A, 1000 V, 0.78 ohm, n-channel, Si, power, mosfeT D3PAK-3 14 A, 1000 V, 0.78 ohm, n-channel, Si, power, mosfeT, TO-247AD TO-247, 3 PIN power MOS 7TM is a new generation of low loss, high voltage, n-channel enhancement mode power mosfeTS.
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File Size |
160.54K /
5 Page |
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Advanced power Technolo... ADPOW[Advanced power Technology] Microsemi, Corp.
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Part No. |
APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL03 APT10090BLLG
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Description |
power MOS 7TM is a new generation of low loss, high voltage, n-channel enhancement mode power mosfeTS. 12 A, 1000 V, 0.9 ohm, n-channel, Si, power, mosfeT, TO-247AD TO-247, 3 PIN 12 A, 1000 V, 0.9 ohm, n-channel, Si, power, mosfeT D3PAK-3
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File Size |
93.49K /
5 Page |
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it Online |
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Advanced power Technolo... ADPOW[Advanced power Technology] Microsemi, Corp.
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Part No. |
APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090BFLL03
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Description |
power MOS 7TM is a new generation of low loss, high voltage, n-channel enhancement mode power mosfeTS 12 A, 1000 V, 0.9 ohm, n-channel, Si, power, mosfeT D3PAK-3 12 A, 1000 V, 0.9 ohm, n-channel, Si, power, mosfeT, TO-247AD TO-247, 3 PIN
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File Size |
94.01K /
5 Page |
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
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Part No. |
BUZ104SL-4
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Description |
Quad-Channel SIPMOS power Transistor SIPMOS ? power Transistor SIPMOS power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, n-channel, Si, power, mosfeT 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, n-channel, Si, power, mosfeT PLASTIC, DSO-28
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File Size |
89.18K /
8 Page |
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http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
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Part No. |
BUZ101SL-4
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Description |
Quad-Channel SIPMOS power Transistor SIPMOS ? power Transistor 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, n-channel, Si, power, mosfeT PLASTIC, DSO-28 SIPMOS power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, n-channel, Si, power, mosfeT
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File Size |
89.10K /
8 Page |
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Siemens Semiconductor Group SIEMENS AG Infineon Technologies AG
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Part No. |
BUZ103SL-4
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Description |
Quad-Channel SIPMOS power Transistor SIPMOS ? power Transistor SIPMOS power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, n-channel, Si, power, mosfeT 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, n-channel, Si, power, mosfeT PLASTIC, DSO-28
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File Size |
106.69K /
8 Page |
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Price and Availability
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