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  non-flammable Datasheet PDF File

For non-flammable Found Datasheets File :: 637    Search Time::2.547ms    
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    RD01MUS1 RD01MUS1-15

Quanzhou Jinmei Electronic ...
Mitsubishi Electric Semiconductor
Part No. RD01MUS1 RD01MUS1-15
OCR Text ...auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceede...
Description RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

File Size 202.71K  /  6 Page

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    Mitsubishi
Part No. MGFS45V2527 S452527
OCR Text ... auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol VGS (off) P1dB GLP ID add IM3 Rth (ch-c) Par...
Description 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system

File Size 27.03K  /  2 Page

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    MGFL48V1920

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFL48V1920
OCR Text ..., auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol VGS(off) P2dB GLP ID(RF) P.A.E. Rth (ch-c) Parameter Saturated drain current...
Description From old datasheet system
1.9-2.0GHz BAND 60W GaAs FET

File Size 324.67K  /  6 Page

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    Mitsubishi
Part No. RD15HVF1
OCR Text ...auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded m...
Description MOSFET
From old datasheet system

File Size 324.78K  /  8 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2123 S452123
OCR Text ... auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol VGS (off) P1dB GLP ID add IM3 Rth (ch-c) Par...
Description 2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

File Size 24.72K  /  2 Page

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    MGFS45V2325 S452325

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2325 S452325
OCR Text ... auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol VGS (off) P1dB GLP ID add IM3 Rth (ch-c) Par...
Description 2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET

File Size 26.63K  /  2 Page

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    RA30H0608M RA30H0608M-01 RA30H0608M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA30H0608M RA30H0608M-01 RA30H0608M-E01
OCR Text ...mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current ...flammable material, or (iii) prevention against any malfunction or mishap. RA30H0608M MITSUBIS...
Description 68-88MHz 30W 12.5V MOBILE RADIO 68 - 88MHz功率30W 12.5V移动通信

File Size 56.04K  /  9 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFC45V5053A C455053A
OCR Text ... auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS Symbol IDSS Gm VGS (off) P1dB GLP P.A.E. IM3 *2 Rth (ch-c) P...
Description 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET

File Size 15.85K  /  1 Page

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    BA01207

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BA01207
OCR Text ...auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. Created Date: Apr.2004
Description GaAs HBT HYBRID IC
From old datasheet system

File Size 26.48K  /  1 Page

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For non-flammable Found Datasheets File :: 637    Search Time::2.547ms    
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