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Alpha & Omega Semiconductor
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| Part No. |
AOK30B135W1
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| OCR Text |
...f diode forward voltage dynamic parameters a v ce =5v, i c =1ma electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v ce =25v, f=1mhz v ce =20v, i c =30... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
533.88K /
8 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOK20B120E2
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| OCR Text |
...f diode forward voltage dynamic parameters a v ce =5v, i c =1ma electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v ce =25v, f=1mhz v ce =20v, i c =20... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
516.61K /
8 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOK20B120E1
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| OCR Text |
...nergy turn-off energy switching parameters, (load inductive, t j =175c) turn-off delay time t j =25c v ge =15v, v ce =600v, i c =20a, r g =15 ? , parasitic inductance=150nh turn-off fall time gate to collector charge gate to emitter charge... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
713.91K /
8 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOK20B120D1
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| OCR Text |
... v ce =960v, i c =20a switching parameters, (load inductive, t j =25c) total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
540.35K /
8 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOK18N65
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| OCR Text |
...v, v ds =520v, i d =18a dynamic parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =650v, v gs =0v a bv dss static drain-source on-resis... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
301.39K /
5 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOUS66923
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| OCR Text |
... unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v r ds(on) static drain-source on-resistance gate source char... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
344.90K /
6 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF15B65M2
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| OCR Text |
...ime turn-on delaytime switching parameters, (load inductive, t j =150c) diode reverse recovery timediode reverse recovery charge diode peak reverse recovery current t j =25c i f =15a, di/dt=200a/ s, v cc =400v turn-off delay time t j =25c ... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
572.05K /
9 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
AST1S31HF
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| OCR Text |
... . . . . . . . . 7 5 datasheet parameters over the temperatur e range . . . . . . . . . . . . . . . . 8 6 functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6.1 output voltage adju... |
| Description |
Up to 4 V, 3 A step-down 2.3 MHz switching regulator for automotive applications
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| File Size |
661.54K /
29 Page |
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it Online |
Download Datasheet |
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Panasonic
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| Part No. |
ECEV1HA2R2NR ECEV1AA100NR
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| OCR Text |
...ectrolytic capacitor electrical parameters are normally specified at 20 c temperature and 120hz frequency. these par ameters vary with changes in temper ature and fr equency. circuit designers should take these changes into consideration... |
| Description |
Aluminum Electrolytic Capacitors (Surface Mount Type) A-V
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| File Size |
161.40K /
9 Page |
View
it Online |
Download Datasheet |
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