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飞思卡尔半导体(中国)有限公司
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Part No. |
MRF6S18100NBR1
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OCR Text |
power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and gsm edge base station applications with f...factor by i d 2 for mttf in a particular application. 100 110 120 130 140 150 160 170 180 1.e+08 1.... |
Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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File Size |
703.35K /
20 Page |
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it Online |
Download Datasheet
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
IRFZ44N
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OCR Text |
power mosfet parameter typ. max. units r q jc junction-to-case CCC 1.5 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja juncti...factor 0.63 w/c v gs gate-to-source voltage 20 v i ar avalanche current ? 25 a e ar repetitive ava... |
Description |
HEXFET? Power MOSFET
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File Size |
235.11K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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