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pulse.8a Datasheet PDF File

For pulse.8a Found Datasheets File :: 8728 Search Time::2.046ms
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				HITACHI[Hitachi Semiconductor]
Part No.	HAT2040R
OCR Text	...e Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 20 15 120 15 2.5 150 -55 to +150 Unit V V A A A W C C...8A, VGS = 10V Note3 I D = 8A, VGS = 4V Note3 I D = 8A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VD...
Description	Silicon N Channel Power MOS FET Power Switching
File Size	48.79K / 10 Page	View it Online	Download Datasheet

				MICRO COMMERCIAL COMPONENTS
Part No.	MBR880
OCR Text	...easured at 1.0mhz, v r =4.0v *pulse test: pulse width 300 sec, duty cycle 2% a b c k j i g f e d n m l h pin 1 pin 2 case pin 12 inches mm a .560 ....
Description	8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC
File Size	390.13K / 3 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surfac...8A 56A 75W 0.6W/C 450mJ 5.0V/ns -55 to 150C 300C 1.67C/W 4C/W Notes 1) Pulse Test: Pulse Width 3...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				AUK
Part No.	SMK1060PS
OCR Text	... note ; repetitive rating : pulse width limited by maximum junction temperature l=10mh, i as =9.5a, v dd =50v, r g =25 ? , starting ...8a - 8 - nc source-drain diode ratings and characteristics ...
Description	Advanced N-Ch Power MOSFET
File Size	1,694.38K / 34 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	CJQ7328
OCR Text	... notes: 1. repetitive rating : pulse width limited by junction temperature. 2. surface mounted on 1?1? fr4 board,t 10s . 3. pulse test ...8a t a =25 pulsed v gs ?? r ds(on) t a =25 pulsed v gs =-10v v gs =-4.5v on-resistance r ds...
Description	SOP8 Plastic-Encapsulate MOSFETS
File Size	1,043.79K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text	...l EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 213 62 Units mJ A Diode Characteri...8A 8 VDS = 15V C, Capacitance (pF) 2000 Ciss 6 1500 1000 C oss 4 ...
Description	30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...l EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 213 62 Units mJ A Diode Characteri...8A VDS = 15V 8 C, Capacitance (pF) Ciss 2100 6 1400 C oss 4 700 ...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				FUJI ELECTRIC CO LTD
Part No.	2SK3687-01MR
OCR Text	...haracteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 ...8a,vgs=10v 3 2sk3687-01mr fuji power mosfet -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5...
Description	16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	101.78K / 4 Page	View it Online	Download Datasheet

				Littelfuse, Inc.
Part No.	SPHV15-01ETG-C
OCR Text	...parameter value units p pk peak pulse power (t p =8/20s) 200 w t op operating temperature -40 to 125 c t stor storage temperature -55 to 150...8a, t p =8/20s, fwd 25.0 v dynamic resistance 2 r dyn tlp, t p =100ns, i/o to gnd 0.48 ? peak pulse ...
Description	SPHV-C Series 200W Discrete Bidirectional TVS Diode
File Size	803.77K / 6 Page	View it Online	Download Datasheet

For pulse.8a Found Datasheets File :: 8728 Search Time::2.046ms
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