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rds Datasheet PDF File

For rds Found Datasheets File :: 33682 Search Time::2.047ms
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				IRF[International Rectifier]
Part No.	IRF1010Z IRF1010ZL IRF1010ZS
OCR Text	...ed up to Tjmax G VDSS = 55V rds(on) = 7.5m S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon are...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	298.51K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	...che Rated VDSS = 40V G S rds(on) = 0.009 ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co...
Description	Power MOSFET(Vdss=40V/ rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	...ed up to Tjmax G VDSS = 20V rds(on) = 4.0m S ID = 174A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFET utilizes the lastest processing techniques to achieve extr...
Description	Power MOSFET(Vdss=20V, rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	... to Tjmax VDSS = 20V G S rds(on) = 4.0m ID = 180A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFET utilizes the lastest processing techniques to achieve extremely ...
Description	Power MOSFET(Vdss=20V, rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

				FreesCale
Part No.	MC4828
OCR Text	...2 0.13 0.14 0.15 0.16 0 2 4 6 8 rds(on) - on - resistance( ) id - drain current (a) 3.5v 4.5v 6v 8v,10v 4v 0 2 4 6 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 id - drain current (a) vds - drain - to - source voltage (v)...
Description	N-Channel 60-V (D-S) MOSFET
File Size	338.60K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310NL IRF1310NS
OCR Text	...ated D VDSS =100V G S rds(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com...
Description	Power MOSFET(Vdss=100V, rds(on)=0.036ohm, Id=42A)
File Size	152.94K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	...ted D VDSS = 100V G S rds(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com...
Description	Power MOSFET(Vdss=100V/ rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

				FreesCale
Part No.	MC4807
OCR Text	....02 0.03 0.04 0.05 0 5 10 15 20 rds(on) - on - resistance( ) id - drain current (a) 3.5v 3v 4v,4.5v,6v,8v,10v 0 5 10 15 20 0 0.1 0.2 0.3 0.4 0.5 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4...
Description	Dual P-Channel 30-V (D-S) MOSFET
File Size	409.08K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1404L IRF1404S
OCR Text	...404L D VDSS = 40V G S rds(on) = 0.004 ID = 162A Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ...
Description	Power MOSFET(Vdss=40V, rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, rds(on)=0.004ohm, Id=162A)
File Size	237.30K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1404
OCR Text	...ated D VDSS = 40V G S rds(on) = 0.004 ID = 162A Description Seventh Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area...
Description	Power MOSFET(Vdss=40V, rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ rds(on)=0.004ohm/ Id=162A)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

For rds Found Datasheets File :: 33682 Search Time::2.047ms
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