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M3005D 20114 HC157 SP485E 2N6029 D106X 93C66LI SF38G
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    ATMEL CORP
Part No. AT49LV8011-90CC AT49LV8011T-90CC AT49BV8011T-12CC AT49BV8011T-12TC
OCR Text read and write: 2.7v to 3.3v (bv), 3.0v to 3.3v (lv)  access time ? 90 ns  sector erase architecture fourteen 32k word (64k byte) sectors ...back to v cc . erase and erase suspend/resume commands will not work while in this mode; if entered ...
Description 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48

File Size 397.34K  /  18 Page

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    Xicor
Part No. X28ST010
OCR Text ... 8-bit memory location during a read or write operation. chip enable (ce ) the chip enable input must be low to enable all read/ write o...back bias voltage (v bb ) it is required to provide -3v on v bb pin. this negative voltag...
Description High Temperature, 5 Volt, Byte Alterable E2PROM 128K x 8 Bit

File Size 240.80K  /  13 Page

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    Winbond Electronics
Part No. W25P022AD-6 W25P022AD-7 W25P022AF-6 W25P022AF-7 W25P022A-7 W25P022A-6
OCR Text ...of valid data output in a burst read cycle when the device is deselected by ce2/ ce3 . this mode supports 3-1-1-1- 1-1-1-1 in a two-bank, back-to-back burst read cycle. on the other hand, the 2t/1t mode disables data output within one cycle...
Description 64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM

File Size 306.46K  /  17 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM372C1600BK
OCR Text ...dq0 - dq71 data in/out w0 , w2 read/write enable oe0 , oe2 output enable ras0 , ras2 row address strobe cas0 , cas4 column address strob...back v ss dq36 dq37 dq38 dq39 v cc dq40 dq41 dq42 dq43 dq44 v ss dq45 dq46 dq47 dq48 dq49 v cc dq50 ...
Description 16M x 72 DRAM DIMM(16M x 72 动RAM模块)

File Size 389.22K  /  18 Page

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