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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT58M50J
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| OCR Text |
... Switching VDD = 333V, ID = 42A RG = 2.2 6 , VGG = 15V
425 340 75 155 60 70 155 50 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Curren... |
| Description |
N-Channel MOSFET
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| File Size |
262.29K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT58M80J
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| OCR Text |
... Switching VDD = 533V, ID = 43A RG = 2.2 6 , VGG = 15V
410 570 95 290 100 145 435 125
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source ... |
| Description |
N-Channel MOSFET
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| File Size |
257.72K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75JFLL APT6038BFLL APT6038SFLL APT60M75
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| OCR Text |
...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP
2
ns
MAX
uNIT Amps Volts V/ns ns
58 232 1.3 15 300 600
...58A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
58.43K /
2 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75JLL_04 APT60M75JLL APT60M75JLL04
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| OCR Text |
...= 15V VDD = 300V ID = 58A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 58A, RG = 5 6 INDuCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 58A, RG = 5
MIN
TYP
MAX
uNIT
8930 1130 50 195 48 100 23 15 55 ... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
158.96K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75JLL APT30M75BLL APT30M75SLL
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| OCR Text |
... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode)
2
ns
MAX
uNIT Amps Volts ns C
58 232 1.3
...58A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
56.73K /
2 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM120u100D-ALN
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| OCR Text |
...gy vs Current 16 24
V DS =800V RG =1.2 T J=125C L=100H V DS=800V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 I D, Drain Cur... |
| Description |
Single switch with Series diodes MOSFET Power Module
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| File Size |
307.79K /
6 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
|
| Part No. |
APTM120u10DAG
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| OCR Text |
...gy vs Current 16 24
V DS =800V RG =1.2 T J=125C L=100H V DS=800V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 I D, Drain Cur... |
| Description |
Single switch with Series diodes MOSFET Power Module
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| File Size |
263.05K /
6 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
|
| Part No. |
APTM120u10SAG
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| OCR Text |
...gy vs Current 16 24
V DS =800V RG =1.2 T J=125C L=100H V DS=800V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 I D, Drain Cur... |
| Description |
Single switch Series & parallel diodes MOSFET Power Module
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| File Size |
265.55K /
6 Page |
View
it Online |
Download Datasheet |
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